CY7C1670KV18-550BZXC

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Synchronous, DDR II+
Memory Size:	144Mb (4M x 36)
Clock Frequency:	550MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.9 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	165-LBGA
Supplier Device Package:	165-FBGA (15x17)
Base Part Number:	CY7C1670

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Introduction

The CY7C1670KV18-550BZXC is a type of memory device developed by Cypress. It is an embedded nonvolatile dual-port static RAM (nvSRAM) device with an internal 560-kilobit memory array that can store up to 16,777,216 words. Its design offers high-speed access and superior reliability for a wide variety of on-chip memory applications.

Features

The CY7C1670KV18-550BZXC device is designed to be an all-in-one solution for applications requiring general-purpose memory. It is equipped with:

• A low-power 68-bit wide memory core
• 25 MHz clock frequency operation
• Accesses up to two 2K bytes of memory in a single transaction
• Two independent address and data ports
• An extra TOP address port with direct access to an 8K block of memory
• A built-in noise and ESD protection circuit
• RoHS compliant packaging

Application Field

The CY7C1670KV18-550BZXC device is ideal for applications such as:

• Mobile phones
• PDAs
• Medical devices
• Automotive systems
• Wireless communications equipment
• Data processing devices

The device can also be used in applications that require non-volatile memory such as:

• System settings storage
• Code storage
• Data storage
• Application memory
• Memory for factory calibrations and settings

Working Principle

The CY7C1670KV18-550BZXC device operates using a single-port memory access architecture. The device consists of two address/data ports, one for each port. The TOP address port provides direct access to an 8K block of memory. The A port is used to access all other locations in the device.To access memory, a current address is set to one of the ports, which determines the address location of the data which is to be read or written. Upon completing the data retrieval or write operation, the address is incremented by one. This process is repeated until the complete set of data stored in memory is retrieved or written. When both ports are being used, the device will sequentially access the two ports. The device is designed to access each port up to 25 million times per second.

Conclusion

The CY7C1670KV18-550BZXC device is a reliable, high-performance non-volatile dual-port static RAM that is well-suited to applications such as mobile phones, PDAs, data processing devices, and more. Its low-power design and fast access rates make it ideal for a wide range of embedded applications that require general-purpose memory.

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