CY7C185-1XW14I Allicdata Electronics
Allicdata Part #:

CY7C185-1XW14I-ND

Manufacturer Part#:

CY7C185-1XW14I

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 64K PARALLEL DIE
More Detail: SRAM - Asynchronous Memory IC 64Kb (8K x 8) Parall...
DataSheet: CY7C185-1XW14I datasheetCY7C185-1XW14I Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 64Kb (8K x 8)
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Description

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The CY7C185-1XW14I is a state-of-the-art memory device manufactured by Cypress Semiconductor. It occupies just one square inch of space and weighs just a few grams, making it one of the most compact and lightweight memory modules available on the market. It is especially designed for applications where speed, reliability and power consumption are major concerns.

This memory device is a monolithic 8K bit static random access memory (SRAM) that operates on a single +5 volt power supply. It features a 1 MHz SPI mode and offers high speed read and write operations. The device includes a factory programmed pin-selectable serial device identifier, a user-programmable programmable memory security feature, and an interface for firmware upgradeability.

The CY7C185-1XW14I offers a number of advantages that make it suitable for use in a wide range of applications. For example, its power consumption is lower than that of similar devices, making it suitable for battery powered devices. Its fast read and write operation also make it suitable for high-speed applications such as video streaming. In addition, it is highly reliable, with error correction and protection features that ensure the integrity of the data stored in the device.

In terms of working principle, the CY7C185-1XW14I uses an 8K bit static random access memory (SRAM) array. This array is capable of storing data in its memory cells. When the device is powered on, the SRAM array starts to read data stored in its memory cells to passive capacitors, which stores the data bits in a static state. When the device is powered off, the voltage stored in the capacitors is discharged, which erases the data stored in the memory cells.

The CY7C185-1XW14I is an ideal memory device for applications where speed and reliability are paramount. Its low power consumption and fast read and write operations make it an ideal choice for a wide range of applications. It is also highly reliable, featuring an error correction and protection feature that ensures the integrity of the data stored in the device. In addition, its small size and lightweight design make it an ideal choice for applications that require a small form factor memory device.

The specific data is subject to PDF, and the above content is for reference

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