CY7C2163KV18-550BZXI

CY7C2163KV18-550BZXI Application Field and Working Principle

CY7C2163KV18-550BZXI is a static random access memory (SRAM) device that is one of few types of integrated circuits (ICs) available in the current commercial market. This type of device is generally used in applications that require fast, accurate, and reliable retrieval of data. The unique features of this device can open up possibilities in many different areas. This article focuses on the application field and working principle behind the CY7C2163KV18-550BZXI.

Application Field

The CY7C2163KV18-550BZXI device is designed for applications where high-speed access of data is necessary. These applications include embedded systems, signal processing, multimedia systems, memory cards, and other high-speed applications such as audio and video streaming. It can be used in applications where fast and reliable retrieval of data is essential, such as in the process of creating graphics images, processing digital audio files, and storing the data in a memory card.

Working Principle

The CY7C2163KV18-550BZXI is a static random access memory device. It is designed to store data in a specific location for retrieval quickly and reliably. The CY7C2163KV18-550BZXI utilizes a CMOS (Complementary Metal-Oxide Semiconductor) memory cell to store one bit of information. Each memory cell is created from two logic gates, a transistor, and a capacitor. This arrangement allows for the high speed of access needed to meet the requirements of applications that depend on quick retrieval of data.

The CY7C2163KV18-550BZXI device contains a total of 3,600 memory cells. The memory cells are arranged in two banks, with each bank containing 1,800 cells. This arrangement allows for a maximum of 64 bytes to be stored in the chip at one time. As the data is transferred into the chip, the bit values of the data are stored in the cells.

The data stored in the CY7C2163KV18-550BZXI device is accessed by the application through the use of a control signal. When the control signal is sent to the chip, it reads the data that is stored in the cells. The data can then be sent to the application for further processing. The access time is dependent on a number of factors, including the operating temperature, the speed of the device, and the clock frequency of the device.

Conclusion

The CY7C2163KV18-550BZXI is a static random access memory device that is suitable for a variety of applications that require fast, reliable, and accurate retrieval of data. It utilizes a CMOS memory cell to store data, and its two-bank architecture allows for up to 64 bytes of data to be stored at one time. Data is accessed through the use of a control signal, and the access time is dependent on several factors. This device is suitable for use in embedded systems, signal processing, multimedia systems, memory cards, and any other application that requires fast, reliable, and accurate access of data.