CY7C2170KV18-550BZXC

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CY7C2170KV18-550BZXC is an advanced low-power, high-speed Static RAM that provides an easy-to-use, well-integrated solution for high-performance embedded systems. The device offers an unbeatable combination of memory density and speed, making it an excellent choice for high-end applications.

The CY7C2170KV18-550BZXC offers low operating power and speeds up to 166 MHz. It is designed specifically for high-speed code execution with features such as:

• Single data rate (SDR) and double data rate (DDR) modes
• High-speed cycle time of 4.3ns
• On-chip automatic self-refresh
• Optional write protection

The CY7C2170KV18-550BZXC comes in ultra-small packages, such as 5mm x 5mm, 2.5mm x 2.5mm, and 1.8mm x 2mm, allowing for a higher memory density with fewer packages required. The devices have the same pin out for either SDR or DDR operation, simplifying the design process.

The CY7C2170KV18-550BZXC is geared towards applications such as Storage and Networking, Automotive, Embedded Systems, Industrial, Healthcare and Wearables, Telecommunications, High Performance Computing and others.

In Storage and Networking applications, the device is used for in-system data storage, data buffering and cache memory, enabling fast data access in networking systems. In Automotive applications, it is used for automotive Electronic Control Units (ECU) processors, mirroring and logging memory store, and vehicle infotainment systems. In the industrial market, it is used in Industrial Automation applications such as motor control, signal conditioning, filtering, and image processing. In healthcare, it is used in cardiovascular monitoring, digital thermometers and other medical applications. In Wearables, devices like smartwatches and health monitors use the device. In Telecommunications, it is used for Cellular Base Station Applications such as base transceiver station, TRX and Remote Radio Unit. In High Performance Computing, it is used for system on chip (SoC) and field programmable gate array (FPGA) applications.

The CY7C2170KV18-550BZXC works by organizing memory into an array of rows and columns. Each row is connected to a word line, each column is connected to a bit line, and each cell on the array is connected to both a word line and a bit line. Data is stored in the cells in the form of a charge and is written to or read from can by applying electrical signals to the word line and/or bit line.

The device also offers a number of features that enhance its functionality, such as dual bank architecture and various types of error correction. The dual bank architecture ensures that banks can be operated independently of each other. It also has various types of error correction. For example, it supports single error correction, double error correction and ECC parity bits.

In conclusion, the CY7C2170KV18-550BZXC is a high speed, low power static RAM device. It is an excellent choice for high-end applications such as Storage and Networking, Automotive, Embedded Systems, Industrial, Healthcare and Wearables, Telecommunications, High Performance Computing, etc. It offers various features such as dual bank architecture, error correction and high speed operation, making it a superior choice for these applications. Furthermore, its small package requirements enable a higher memory density with fewer packages, making it an ideal choice for embedded applications.

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