
Allicdata Part #: | CY7C25632KV18-500BZXI-ND |
Manufacturer Part#: |
CY7C25632KV18-500BZXI |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 72M PARALLEL 165FBGA |
More Detail: | SRAM - Synchronous, QDR II+ Memory IC 72Mb (4M x 1... |
DataSheet: | ![]() |
Quantity: | 90 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous, QDR II+ |
Memory Size: | 72Mb (4M x 18) |
Clock Frequency: | 500MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 165-LBGA |
Supplier Device Package: | 165-FBGA (13x15) |
Base Part Number: | CY7C25632 |
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Memory technology is a major development in the field of computer engineering, and the CY7C25632KV18-500BZXI is one of the main products of Cypress Semiconductor. It is classified as a high-density memory technology and has a wide range of applications. This article aims to provide an overview of the CY7C25632KV18-500BZXI and its working principle.
The CY7C25632KV18-500BZXI is a 32Kx18 high-density memory technology suitable for a wide range of applications such as automotive, consumer and industrial. It is capable of storing 32K words, with each word being 18 bits in length. It is a synchronous SRAM device, meaning it is able to operate in synchrony with the clock signal. This ensures that all operations are completed in a synchronized manner, improving overall performance.
The CY7C25632KV18-500BZXI has a range of features that make it suitable for certain applications. It has an operating voltage of 3.3-3.6V and a maximum clock frequency of 60 MHz. It also has an extended temperature range of -40°C to 125°C, making it suitable for use in extreme temperatures. Furthermore, the device is certified for automotive applications, meaning that it is tested and proven to meet the rigorous standards required for these applications.
The working principle behind the CY7C25632KV18-500BZXI is relatively simple. It is a synchronous SRAM memory device, which means that all operations are completed in synchronization with the clock signal. All operations are controlled by the clock signal, with operations such as reading from and writing to the memory being completed in synchronization with the clock signal.
The CY7C25632KV18-500BZXI comes with a range of features such as Self-Refresh, Timed Refresh and Power-Down modes. The Self-Refresh mode allows the device to refresh its own content and is useful for applications that require the data to be refreshed regularly. The Timed Refresh mode is useful for applications where dynamic memory refresh is required, as well as providing a way to reduce power consumption. Finally, the Power-Down mode allows the device to be placed into a low-power state when not in use, allowing for extended battery life.
The CY7C25632KV18-500BZXI is a high-performance memory technology suitable for various applications. Its range of features such as Self-Refresh, Timed Refresh and Power-Down modes make it suitable for a wide range of applications. Furthermore, its ability to operate in synchrony with the clock signal ensures that all operations are completed in a synchronized manner, providing improved performance. This makes it an ideal choice for any application that requires a reliable and high-performance memory technology.
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