CY7C25652KV18-500BZXC

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CY7C25652KV18-500BZXC belongs to a series of memory devices manufactured by Cypress Semiconductors for a wide range of applications, primarily for use as nonvolatile data storage. The CY7C25652KV18-500BZXC device is a 32-Kbit static static RAM device. The device utilizes an asynchronous static RAM (SRAM) cell built using a 6-transistor design that can be used either in asynchronous or pipelined modes.The device is organized as 32,768 x 8 words and is accessed using both an 8-bit data bus and an 8-bit "Page Access Write" bus. The device operates over a single supply voltage range of 2.7v to 3.6v, with a typical standby current of less than 200uA. The access time of the CY7C25652KV18-500BZXC device is 20ns, with a data access time of 84ns.The CY7C25652KV18-500BZXC device is ideal for use as low-power memory for consumer, industrial and automotive applications. Its low-power features make it ideal for applications that require high-density and low-power SRAM memory devices.The device can be used in a wide range of applications including MP3 players, digital cameras, mobile phones, personal digital assistants, GPS, surveillance systems and other consumer electronic applications. Additionally, the device provides high-density storage and fast access times suitable for medical, industrial, automotive and commercial applications.The device utilizes the low-voltage operation and high-speed access times of typical asynchronous SRAMs with the small package size and low-power consumption of the standard series products. The device offers extended temperature range and a wide operating voltage range (2.7V - 3.6V), making it suitable for many embedded systems designs.In addition to its 32Kbit memory, the CY7C25652KV18-500BZXC has built-in error checking and correction (ECC) features, making it reliable and ideal for applications that require high data integrity such as automotive systems.The device also features parity checking, which allows simultaneous verification of data during data access operations or page writes, ensuring that only valid data is written to the memory. The parity check can also be used for detection of single bit errors during reads and writes.The CY7C25652KV18-500BZXC has an internal 8-bit command code interface, which allows commands to be issued from the host system to the SRAM to access and modify memory. This feature allows for greater flexibility when using the device, enabling more efficient memory access operations.Overall, the CY7C25652KV18-500BZXC provides an ideal solution for any application requiring high-performance, low-power non-volatile memory. It\'s wide array of features make it suitable for a variety of applications, from consumer electronics to industrial and automotive applications.

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