CY7C25652KV18-500BZXI Allicdata Electronics
Allicdata Part #:

CY7C25652KV18-500BZXI-ND

Manufacturer Part#:

CY7C25652KV18-500BZXI

Price: $ 209.03
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 72M PARALLEL 165FBGA
More Detail: SRAM - Synchronous, QDR II+ Memory IC 72Mb (2M x 3...
DataSheet: CY7C25652KV18-500BZXI datasheetCY7C25652KV18-500BZXI Datasheet/PDF
Quantity: 77
1 +: $ 190.03300
10 +: $ 187.22000
25 +: $ 182.99700
Stock 77Can Ship Immediately
$ 209.03
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II+
Memory Size: 72Mb (2M x 36)
Clock Frequency: 500MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)
Base Part Number: CY7C25652
Description

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CY7C25652KV18-500BZXI belongs to a type of non-volatile memory, which is widely used in various application fields. This article will introduce the application fields of CY7C25652KV18-500BZXI memory as well as its working principles.

The CY7C25652KV18-500BZXI memory is a non-volatile type of memory, which stores data even when power supply to the memory device is cut off. This memory is particularly suitable for applications which need the data to be stored when the device is turned off. This type of memory is widely used in devices such as ATMs, medical devices and industrial controllers, as they require data to be saved even when there is a power outage.

The CY7C25652KV18-500BZXI memory utilizes NOR Flash technology and is composed of cells arranged in a grid. Each cell, also known as a NOR Flash bit, is composed of a floating gate transistor, an insulating layer and a control gate. When a voltage is applied to the control gate, an electric field is created between the control gate and the floating gate. This electric field causes electrons to move from the control gate to the floating gate, which sets the state of the NOR Flash bit. Read/write operations of the memory occur by controlling the electrical field in the individual NOR Flash bits.

The CY7C25652KV18-500BZXI memory also offers several key advantages, such as a small form factor, low power usage and easy programming. These advantages make the memory ideal for use in applications requiring data storage in a compact and energy-efficient package, such as medical devices, wearable devices and Internet-of-Things (IoT) devices.

The CY7C25652KV18-500BZXI memory has become a popular choice for applications requiring non-volatile memory due to its low cost, high density and simple programming interface. The memory has been adopted by several manufacturers of ATMs, medical devices, industrial controllers, etc. As a result, it is expected to become an important component in many embedded systems in the near future.

In conclusion, CY7C25652KV18-500BZXI memory is a type of non-volatile memory which is used in many types of embedded systems. It is highly cost-effective and offers several key advantages such as a small form factor, low power usage and easy programming. As the memory is adopted by more and more manufacturers, it is expected to become an important component in many embedded systems in the near future.

The specific data is subject to PDF, and the above content is for reference

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