
Allicdata Part #: | CY7C2568KV18-450BZC-ND |
Manufacturer Part#: |
CY7C2568KV18-450BZC |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 72M PARALLEL 165FBGA |
More Detail: | SRAM - Synchronous, DDR II+ Memory IC 72Mb (4M x 1... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous, DDR II+ |
Memory Size: | 72Mb (4M x 18) |
Clock Frequency: | 450MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 165-LBGA |
Supplier Device Package: | 165-FBGA (13x15) |
Base Part Number: | CY7C2568 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The CY7C2568KV18-450BZC memory device is a low-power, high-performance device from Cypress Semiconductor Corporation. CY7C2568KV18-450BZC memory is one of the most advanced memory devices available in the market today, offering excellent performance and reliability. This device is well suited for applications requiring low power and high endurance.
The CY7C2568KV18-450BZC memory device consists of an array of 8192 single-byte cells, each with its own integrated Programmable Logic Device (PLD). This PLD allows the user to program each cell to behave differently than the others, allowing for flexible programming and configuration. Each cell can be configured individually, allowing the user to tailor the functionality of the memory device to their specific application.
The working principle of the CY7C2568KV18-450BZC memory device is that electrical charge is used to represent data. Each cell\'s charge can be increased or decreased through the application of electrical signals, thus allowing for the storage and retrieval of data. The charge of each cell can be used to store program instructions, numbers, and other types of information. The device can also respond to external command signals, allowing the user to control and manipulate the data stored in the memory device.
The CY7C2568KV18-450BZC memory device is most commonly used in applications that require large amounts of memory but that also need to be cost-effective, power-efficient, and reliable. Examples of such applications include memory intensive automation systems, medical instruments, and industrial control systems. Additionally, the device is used to provide reliable storage in computing and networking applications, for big data analysis, and for embedded systems.
The high performance of the CY7C2568KV18-450BZC memory device makes it attractive for many applications, including real time control of industrial processes, high-speed data acquisition, and for embedded operating systems. Additionally, this device offers low operating power consumption, making it especially suitable for battery powered applications. The device also offers a wide operating temperature range, making it suitable for various environments.
The CY7C2568KV18-450BZC memory device is a reliable, high-performance solution for applications that require large amounts of memory. With its low power consumption, wide operating temperature range, and flexibility, the device is a great choice for many applications. Furthermore, its high performance and reliability make it an ideal choice for applications that require reliable storage and fast data access, such as in networking, computing, and embedded systems.
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