CY7C25702KV18-500BZXC

CY7C25702KV18-500BZXC is a high-speed synchronous DRAM Mbit memory device that belongs to the memory classification. It has a wide range of applications namely embedded, gaming, telecommunications, automotive, industrial control, medical and banking. The device consists of a two-port memory cell array and supports bursty access and greater random-access capabilities.

The device is also equipped with x4, x8 and x16 port widths, which enable high memory bandwidth for high-speed volatile applications. It continuously refreshes data to maintain memory without needing operator attention. The higher data path widths also allow it to support multiple devices daisy-chaining together, allowing one device to access up to 4 times the memory address space.

As mentioned, the device is based around a two-port memory cell array. A two-port cell array consists of two memory bits with an associated address bit and a stored data bit. The address bit and stored data bit can be written, read and compared. When a write operation is performed and the data stored in a memory bit are identical to the data being written, the associated write is ignored. This function enables the device to detect and refresh data without needing operator intervention.

The device also includes error-correction capabilities to detect and correct up to four errors in any page of 1 kb data. This feature enhances the data integrity by detecting, identifying and correcting errors. Furthermore, the device supports multiple supply voltage and frequency ranges, allowing a designer to customise to accommodate various applications.

CY7C25702KV18-500BZXC features fully-buffered clock control, allowing delays of signal transitions between 1 ns and 4.2 us, depending on the configuration. This, along with fast write enable and read/write enable times, enable the device to take advantage of high-performance operation at data-rates of up to 400 Mbps.

In summary, CY7C25702KV18-500BZXC is a high-performance, high-speed synchronous DRAM Mbit memory device aimed for applications like embedded, gaming, telecommunications, automotive, industrial control, medical and banking. It uses a two-port memory cell array, error correction capabilities, fast write enable and read/write enable times and fully-buffered clock control, allowing delays of signal transitions between 1 ns and 4.2 us, depending on the configuration.