Allicdata Part #: | CZDM1003NTR-ND |
Manufacturer Part#: |
CZDM1003N TR |
Price: | $ 0.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | MOSFET N-CH 100V 3A SOT-223 |
More Detail: | N-Channel 100V 3A (Ta) 2W (Ta) Surface Mount SOT-2... |
DataSheet: | CZDM1003N TR Datasheet/PDF |
Quantity: | 3000 |
1000 +: | $ 0.23184 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 975pF @ 25V |
Vgs (Max): | 20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CZDM1003N TR is a N-channel Enhancement Mode Field Effect Transistor (FET). This type of device is used to switch electrical energy in various applications. In this article, we\'ll take a look at the application field and working principle of the CZDM1003N TR.
The CZDM1003N TR is a N-channel FET with a drain current rating of 40Amps. The transistor is capable of operating at frequencies up to 4MHz and has a typical drain-source breakdown voltage of 100V. This makes it suitable for switching applications that demand high current and high frequency operation. The device is also capable of very low on-state resistance, which enables more efficient switching.
The CZDM1003N TR is typically used in motor control applications such as brushless DC motor drives, where it is used to switch currents at high frequencies. It can also be used in high frequency switching applications such as power supplies, DC-DC converters and other similar devices. In these applications, the device helps to reduce energy losses due to the low on-state resistance offered by the device.
In terms of its working principle, the CZDM1003N TR is basically a switch controlled by a gate signal. The gate signal is used to turn on and off the device, allowing the current to flow from the source to the drain. When the device is turned on, it forms a channel of electrons between the source and drain, allowing current to flow. When it is turned off, this channel is interrupted and the current flow is stopped. This allows for very precise control over the current flow, which is important in many applications.
The CZDM1003N TR is also notable for its low total harmonic distortion characteristics, providing clean and efficient power conversion. The device also has a fast switching speed, allowing it to switch currents at very high frequencies with minimal losses. Lastly, the device also has a very low input capacitance, allowing it to be used in high frequency applications with minimal effect on the system.
In conclusion, the CZDM1003N TR is a N-channel enhancement mode field effect transistor that is suitable for switching applications that demand high current and high frequency operation. It is notable for its high current capability, low on-state resistance, low total harmonic distortion, and fast switching speed. As such, it is a popular choice for motor control applications as well as high frequency switching applications such as power supplies and DC-DC converters.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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CZDM1003N TR | Central Semi... | 0.26 $ | 3000 | MOSFET N-CH 100V 3A SOT-2... |
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