DF2B6.8AFS,L3M Circuit Protection |
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Allicdata Part #: | DF2B6.8AFSL3MTR-ND |
Manufacturer Part#: |
DF2B6.8AFS,L3M |
Price: | $ 0.02 |
Product Category: | Circuit Protection |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TVS DIODE 5V 7V FSC |
More Detail: | N/A |
DataSheet: | DF2B6.8AFS,L3M Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
10000 +: | $ 0.01588 |
30000 +: | $ 0.01429 |
50000 +: | $ 0.01270 |
100000 +: | $ 0.01191 |
250000 +: | $ 0.01058 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Type: | Zener |
Bidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | 5V (Max) |
Voltage - Breakdown (Min): | 5.8V |
Voltage - Clamping (Max) @ Ipp: | 7V (Typ) |
Current - Peak Pulse (10/1000µs): | 1A (8/20µs) |
Power - Peak Pulse: | -- |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | 9pF @ 1MHz |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SOD-923 |
Supplier Device Package: | fSC (SOD-923) |
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DF2B6.8AFS,L3M is a device used in TVS - Diodes applications. It is a low capacitance TVS diode that provides protection to electronic equipment from damage due to electrostatic discharge (ESD), electrical fast transients (EFT) and power surges from occurring. This protection device is particularly useful for protecting sensitive electronics from spikes in voltage that can occur due to electrical events such as lighting or switching surges.
DF2B6.8AFS,L3M provides a low capacitance/low clamping voltage solution that responds rapidly to ESD and other transient events without over-protection. When applied in TVS diode applications, it is capable of protecting high-speed data lines against ESD, EFT, or power surges while maintaining a high level of signal integrity. The device’s low capacitance, low clamping voltage range, and responsive response times make it an ideal solution for TVS diode applications.
This device consists of a pair of complementary metal oxide semiconductor (CMOS) MOSFETs with low capacitance Schottky diodes. The CMOS FETs are used as a series path between the signal and the ground line while the Schottky diodes allow voltage operated bidirectionally. The device works in two different modes: breakdown voltage or avalanche voltage.
In breakdown voltage operation, when the signal voltage is below the reverse breakdown voltage (VR) of the device, the device will direct the signal current to ground; this prevents damage to the protected device. In avalanche voltage operation, when the signal voltage is above the avalanche voltage (VA) of the device, the device will direct the signal current in both directions, charging the buffer capacitors and discharging the parasitic capacitances on the board; this also will prevent damage to the protected device.
DF2B6.8AFS,L3M has superior surge protection ratting, which is the maximum peak current that the device can conduct under specified ESD, EFT, or power surge event conditions. It’s also able to operate in high temperature environments, with the ability to limit the junction temperature to 125°C. Its robust design also makes it resistant to vibration, shock, and corrosion.
Overall, DF2B6.8AFS,L3M is an ideal solution for TVS diode applications, providing a low capacitance/low clamping voltage solution that responds rapidly to ESD and other transient events. It is designed to protect sensitive electronic equipment from voltage surges due to electrical and environmental events while also maintaining a high level of signal integrity. Its superior surge protection rating, high temperature operation, and robust design make it a sure bet for protection in TVS diode applications.
The specific data is subject to PDF, and the above content is for reference
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