DF2B6.8E,L3F Circuit Protection |
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Allicdata Part #: | DF2B6.8EL3FTR-ND |
Manufacturer Part#: |
DF2B6.8E,L3F |
Price: | $ 0.04 |
Product Category: | Circuit Protection |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TVS DIODE 5VWM ESC |
More Detail: | N/A |
DataSheet: | DF2B6.8E,L3F Datasheet/PDF |
Quantity: | 8000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
8000 +: | $ 0.03572 |
16000 +: | $ 0.03175 |
24000 +: | $ 0.02977 |
56000 +: | $ 0.02646 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Type: | Zener |
Bidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | 5V (Max) |
Voltage - Breakdown (Min): | 5.8V |
Voltage - Clamping (Max) @ Ipp: | -- |
Current - Peak Pulse (10/1000µs): | -- |
Power - Peak Pulse: | -- |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | 15pF @ 1MHz |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SC-79, SOD-523 |
Supplier Device Package: | ESC |
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TVS (Transient Voltage Suppressor) diodes are a type of semiconductor device that is used to protect against voltage transients in electronic circuits. This particular type of diode, the DF2B6.8E, L3F, is a dual power non-polar device that offers overvoltage protection for automotive systems. TVS diodes are ideal for use in automotive, military, medical, consumer, and aerospace applications.
The DF2B6.8E, L3F TVS diode is a bi-directional device that is designed to protect against transients with very fast turn-on and low reverse leakage current. It is able to handle a peak pulse current of 8.4A and a peak pulse power of 100W, with a maximum clamping voltage of 14.3V. It also has a wide operating voltage range from -15V to 15V, making it an excellent choice for applications that require protection from transients with a voltage range. Typical applications for this device include automotive electrical systems and power systems, as well as military and aerospace applications.
The working principle of the DF2B6.8E, L3F TVS diode is based on the avalanche breakdown effect. In this effect, when a reverse voltage is applied to the diode, it will begin to conduct until the junction reaches a breakdown voltage. At this point, the junction between the anode and cathode breaks down, creating a conduction path that allows current to flow in both directions. This current will then quickly dissipate, safely protecting the circuit from any excess voltage or current in the circuit.
The DF2B6.8E, L3F TVS diode is a reliable and robust device that is specifically designed for protection against sharp surges and transients in automotive, military, medical, consumer, and aerospace applications. It is capable of handling a peak pulse current of 8.4A and peak pulse power of 100W, with a maximum clamping voltage of 14.3V. Its wide operating voltage range and fast turn-on time make it an excellent choice for protecting delicate circuits from voltage transients.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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DF2B7AFS,L3M | Toshiba Semi... | 0.02 $ | 1000 | TVS DIODE 5.5V 20V SOD923 |
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