DF2B7AFS,L3M Allicdata Electronics

DF2B7AFS,L3M Circuit Protection

Allicdata Part #:

DF2B7AFSL3MTR-ND

Manufacturer Part#:

DF2B7AFS,L3M

Price: $ 0.02
Product Category:

Circuit Protection

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TVS DIODE 5.5V 20V SOD923
More Detail: N/A
DataSheet: DF2B7AFS,L3M datasheetDF2B7AFS,L3M Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
10000 +: $ 0.01588
30000 +: $ 0.01429
50000 +: $ 0.01270
100000 +: $ 0.01191
250000 +: $ 0.01058
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Power - Peak Pulse: 80W
Power Line Protection: No
Capacitance @ Frequency: 8.5pF @ 1MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-923
Supplier Device Package: SOD-923
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Description

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TVS - Diodes

TVS-Diodes, also known as Transient Voltage Suppression Diodes, are electronic components that are used to protect against high-voltage, high-energy spikes. TVS-Diodes are designed to protect electronic equipment from damage caused by electrostatic discharge (ESD) or other transient power events. The DF2B7AFS,L3M model is one type of TVS-Diodes.

Application Field

The DF2B7AFS,L3M is mainly used in automotive, consumer electronics, industrial and medical applications. It is a low capacitance ESD protection diode that is designed to provide a robust protection. This TVS-Diode is a 2.5 Volt-bidirectional diode that can handle peak pulse power up to 400Watts. It provides excellent clamping capabilities that can be used in environments where ESD and electrical over-stress have to be dealt with in a reliable manner.

Working Principle

TVS-Diodes are deviced made of materials like silicon carbide, zinc oxide, aluminum oxide andgallium arsenide. The DF2B7AFS,L3M model is based on a unique multiple discretediodes structure which offers enhanced ESD immunity up to 32 kilovolts. When a high-voltage transient is applied, the diode is turned on and the current is conducted through it, providing protection to the electronic component. This process only occurs with high voltage peaks and does not affect the normal operation of the circuit.

The DF2B7AFS,L3M offers moderate ESD protection while maintaining a low capacitance. This allows it to be broadly applicable across a wide range of applications without affecting the signal integrity of the circuit due to its low capacitance and low series inductance. The low trimming resistance tolerance of ±5% ensures a reliable and consistent performance.

Benefits

The main benefit of using TVS-Diodes is that they protect valuable electronic components from damage caused by ESD events. The DF2B7AFS,L3M model provides robust protection to sensitive components without affecting the signal integrity of the circuit. The low capacitance design will not affect the signal integrity, and the low series inductance ensures a low voltage buildup. Additionally, this TVS-Diode is suitable for a large range of applications and offers high reliability in harsh environments.

The specific data is subject to PDF, and the above content is for reference

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