DF2B6.8M1ACT,L3F Circuit Protection |
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Allicdata Part #: | DF2B6.8M1ACTL3FTR-ND |
Manufacturer Part#: |
DF2B6.8M1ACT,L3F |
Price: | $ 0.04 |
Product Category: | Circuit Protection |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TVS DIODE 5V 20V CST2 |
More Detail: | N/A |
DataSheet: | DF2B6.8M1ACT,L3F Datasheet/PDF |
Quantity: | 10000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
10000 +: | $ 0.03175 |
30000 +: | $ 0.02977 |
50000 +: | $ 0.02646 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Type: | Zener |
Bidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | 5V (Max) |
Voltage - Breakdown (Min): | 6V |
Voltage - Clamping (Max) @ Ipp: | 20V |
Current - Peak Pulse (10/1000µs): | 2.5A (8/20µs) |
Power - Peak Pulse: | 50W |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | 0.3pF @ 1MHz |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SOD-882 |
Supplier Device Package: | CST2 |
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TVS (Transient Voltage Suppressor) diodes are special devices created to protect circuits and components against spikes and transient voltages in power supplies and related electronic systems. The DF2B6.8M1ACT,L3F is a TVS diode that offers an extensive range of features to protect against abnormal overvoltage conditions in various applications. This article will explore how the DF2B6.8M1ACT,L3F can be used and what working principles are behind it.
The DF2B6.8M1ACT,L3F has a wide range of applications in consumer and industrial electronics. Its primary purpose is to reduce voltage stress on transistors, integrated circuits, and other components in the power supplies. It is particularly suitable for use in circuits with both AC and DC power supplies, as it has a low clamping voltage and fast response time. It can also be used in data processing equipment, where it can help protect against overvoltage conditions and provide overvoltage protection.
The DF2B6.8M1ACT,L3F is designed to handle continuous voltages of up to 6.8V and peak pulse voltages of up to 10V. This allows it to effectively protect circuits even under extreme voltage conditions. It is also capable of handling pulse widths of up to 240µs and can be used to dissipate up to 800mW of dissipated power. Furthermore, it offers an industry-standard 350V of ESD (electrostatic discharge) protection and can be used in both low- and medium-capacity applications.
The core feature of the DF2B6.8M1ACT,L3F is its working principle. At its simplest, it consists of two diodes connected back-to-back, each of which is capable of conducting current in one direction. When a transient overvoltage condition occurs, the diode will conduct current in one direction, allowing the current to be diverted away from the circuit and dissipated as heat. This will help to reduce the voltage stress on the components in the circuit.
The DF2B6.8M1ACT,L3F is also designed with an ultra-low impedance, which helps to provide more effective protection against overvoltage conditions. This low impedance allows the diode to respond quickly and efficiently to transient conditions, allowing the current to be diverted away more quickly. This reduces the voltage stress on the components in the circuit and helps to prevent damage.
The DF2B6.8M1ACT,L3F is a versatile and reliable TVS diode, making it suitable for a wide range of applications. It is highly effective at providing overvoltage protection and can handle pulse widths of up to 240µs. It has a fast response time and offers an industry-standard 350V of ESD protection. Lastly, its low impedance allows it to respond quickly to transient conditions, helping to reduce the voltage stress on the components in the circuits and providing more effective protection.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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DF2B7AFS,L3M | Toshiba Semi... | 0.02 $ | 1000 | TVS DIODE 5.5V 20V SOD923 |
DF2B7ASL,L3F | Toshiba Semi... | 0.02 $ | 1000 | TVS DIODE 5.5V 20V SL2 |
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DF2B6.8ACT,L3F | Toshiba Semi... | 0.02 $ | 100000 | TVS DIODE 5V 7V CST2 |
DF2B5M4CT,L3F | Toshiba Semi... | 0.03 $ | 10000 | TVS DIODE 3.6V 15V CST2 |
DF2B5M4SL,L3F | Toshiba Semi... | 0.04 $ | 20000 | TVS DIODE 3.6V 24V SL2 |
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DF2B7AE,H3F | Toshiba Semi... | 0.03 $ | 1000 | TVS DIODE 5.5V 20V ESC |
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DF2B20M4SL,L3F | Toshiba Semi... | 0.03 $ | 20000 | TVS DIODE 18.5V 30V SL2 |
DF2B29FU,H3F | Toshiba Semi... | 0.05 $ | 9000 | TVS DIODE 24V 47V USC |
DF2B6M4SL,L3F | Toshiba Semi... | 0.04 $ | 1000 | TVS DIODE 5.5V 25V SL2 |
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DF2B6.8AFS,L3M | Toshiba Semi... | 0.02 $ | 1000 | TVS DIODE 5V 7V FSC |
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DF2B6.8E,L3F | Toshiba Semi... | 0.04 $ | 8000 | TVS DIODE 5VWM ESC |
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