DG306BDJ-E3

Switch Time (Ton, Toff) (Max):	110ns, 70ns (Typ)
Base Part Number:	DG306
Supplier Device Package:	14-PDIP
Package / Case:	14-DIP (0.300", 7.62mm)
Operating Temperature:	-40°C ~ 85°C (TA)
Crosstalk:	-74dB @ 500kHz
Current - Leakage (IS(off)) (Max):	5nA
Channel Capacitance (CS(off), CD(off)):	14pF, 14pF
Charge Injection:	30pC
-3db Bandwidth:	--
Series:	--
Voltage - Supply, Dual (V±):	±15V
Voltage - Supply, Single (V+):	--
Channel-to-Channel Matching (ΔRon):	--
On-State Resistance (Max):	50 Ohm
Number of Circuits:	2
Multiplexer/Demultiplexer Circuit:	2:1
Switch Circuit:	DPST - NO
Part Status:	Obsolete
Packaging:	Tube

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DG306BDJ-E3 is a monolithic, precision analog switch device with four independent single-pole/double-throw switches. It features very low ON resistance and excellent thermal stability. This small signal analog switch is designed for use in wide variety of applications including signal routing, signal conditioning, signal selection, data acquisition systems, and instrumentation systems. The DG306BDJ-E3 is designed using process technology with CMOS input structures for low power operation, low charge injection and fast switching time. This small signal switch provide low ON resistance over a wide input signal range. The device is made off on a monolithic silicon wafer and designed for surface mounting into packaged form, allowing for small size and low profile. The DG306BDJ-E3 Analog switches are controlled by CMOS logic-compatible digital logic signals and the analog inputs range from 0 volts to +5 volts. The logic control levels are TTL compatible and range from 0 volts (GND) to + 5 volts (VCC). The expanded analog signal range allows direct connection of the analog switch to the inputs of analog-to-Digital converters (ADC) and digital-to-Analog converters (DAC). This feature eliminates the need for level shifting and buffering section required with some switches.The maximum ON resistance of the DG306BDJ-E3 is typically 380Ω. There is no OFF resistance between the two analog signal ports when switches are turned ON. This Off resistance is measured in the “off-state” and is below 1 Ω. The switch resistance increases as the temperature rises, which generally makes the device not temperature stable. The device can be used with no resistive loading or bias applied, eliminating DC errors due to source and drain resistance. The switches are also designed with internal zener diodes which limit the maximum voltage drop across them, providing higher overall efficiency.The DG306BDJ-E3 is designed for one form of switch configurations. The four single-pole/double-throw switches are made up of one set of two Inputs and two Sets of Outputs. This configuration is known as an “active-high” switch, which means the Inputs must be driven to logic high (VCC) levels to open the switch. If a logic low (GND) signal is applied, the switch will be closed. This makes the device suitable for applications such as signal routing, signal conditioning, signal selection, data acquisition systems, and instrumentation systems.The DG306BDJ-E3 switch is also a high voltage, low-power device. It can handle a maximum of +12v and a minimum of -12v on the analog ports, so it can work with both single and dual supply applications. This feature is important for high frequency analog signal applications. The device also has an internal on-chip ESD protection circuit for both the digital and analog signals. This ensures reliability and ensures that the signal does not suffer any interference or degradation.In conclusion, the DG306BDJ-E3 analog switch is a small-signal switch with low power operation and low charge injection. It can be used in various signal routing applications and signal conditioning, and is especially suitable for instrumentation systems. With its wide analog signal range and ESD protection, it provides reliable and durable performance in a range of operating environments.

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