DMA261030R Allicdata Electronics
Allicdata Part #:

DMA261030RTR-ND

Manufacturer Part#:

DMA261030R

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS DUAL PNP MINI5
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: DMA261030R datasheetDMA261030R Datasheet/PDF
Quantity: 3000
3000 +: $ 0.07215
6000 +: $ 0.06778
15000 +: $ 0.06340
30000 +: $ 0.05830
Stock 3000Can Ship Immediately
$ 0.08
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Base Part Number: DMA26103
Supplier Device Package: Mini5-G3-B
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Power - Max: 300mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMA261030R is a transistor array manufactured for a variety of applications. This array is composed of 30 Bipolar Junction Transistors (BJT) arranged in groups of three.Each individual BJT is connected to form a common emitter type of configuration. The BJTs are pre-biased so that they can be used in a variety of applications. This array is ideal for amplifiers and switching circuits.

The pre-biased configuration of the DMA261030R allows for improved performance and efficiency when compared to other BJT arrays. Pre-biased arrays reduce the amount of active components needed and improve overall system performance. BJT arrays are also very efficient in terms of power consumption, making them ideal for high power applications such as motor drives. The array also offers low noise operation, making it suitable for use in sensitive applications.

The DMA261030R offers a variety of features that make it useful for a variety of applications. It can operate up to 600V at 1A, making it suitable for a wide range of circuits. The high current capacity and low on-state resistance make it suitable for shaping and control applications. The array also offers protection against high frequency noise and transients, making it suitable for applications such as switchmode power supplies and RF systems.

The DMA261030R is designed to be easily integrated into a circuit. Its pre-biased configuration allows the array to be used in existing circuits with minimal modifications. The array is also designed to be mounted onto a variety of circuit boards. This makes it ideal for applications that require a standard form factor.

The working principle of the DMA261030R is a simple one. Each individual BJT is connected to form a common emitter type configuration. The bias voltage is then applied to each individual BJT, causing them to turn on. This creates a voltage drop across the emitter-collector junction, resulting in a current flow through the BJT. The current then flows through the circuit, providing the desired result. This current is regulated by the bias voltage, providing for adjustable currents.

The DMA261030R is an ideal solution for a variety of applications. Its pre-biased configuration makes it easy to implement in existing circuits, and its high-performance characteristics make it suitable for demanding applications. The array is easy to mount onto standard circuit boards, and its low noise operation makes it suitable for sensitive applications. The DMA261030R is an excellent solution for those seeking a high-performance BJT array for their circuit designs.

The specific data is subject to PDF, and the above content is for reference

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