Allicdata Part #: | DMA261030RTR-ND |
Manufacturer Part#: |
DMA261030R |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS DUAL PNP MINI5 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | DMA261030R Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.07215 |
6000 +: | $ 0.06778 |
15000 +: | $ 0.06340 |
30000 +: | $ 0.05830 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Base Part Number: | DMA26103 |
Supplier Device Package: | Mini5-G3-B |
Package / Case: | SC-74A, SOT-753 |
Mounting Type: | Surface Mount |
Power - Max: | 300mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMA261030R is a transistor array manufactured for a variety of applications. This array is composed of 30 Bipolar Junction Transistors (BJT) arranged in groups of three.Each individual BJT is connected to form a common emitter type of configuration. The BJTs are pre-biased so that they can be used in a variety of applications. This array is ideal for amplifiers and switching circuits.
The pre-biased configuration of the DMA261030R allows for improved performance and efficiency when compared to other BJT arrays. Pre-biased arrays reduce the amount of active components needed and improve overall system performance. BJT arrays are also very efficient in terms of power consumption, making them ideal for high power applications such as motor drives. The array also offers low noise operation, making it suitable for use in sensitive applications.
The DMA261030R offers a variety of features that make it useful for a variety of applications. It can operate up to 600V at 1A, making it suitable for a wide range of circuits. The high current capacity and low on-state resistance make it suitable for shaping and control applications. The array also offers protection against high frequency noise and transients, making it suitable for applications such as switchmode power supplies and RF systems.
The DMA261030R is designed to be easily integrated into a circuit. Its pre-biased configuration allows the array to be used in existing circuits with minimal modifications. The array is also designed to be mounted onto a variety of circuit boards. This makes it ideal for applications that require a standard form factor.
The working principle of the DMA261030R is a simple one. Each individual BJT is connected to form a common emitter type configuration. The bias voltage is then applied to each individual BJT, causing them to turn on. This creates a voltage drop across the emitter-collector junction, resulting in a current flow through the BJT. The current then flows through the circuit, providing the desired result. This current is regulated by the bias voltage, providing for adjustable currents.
The DMA261030R is an ideal solution for a variety of applications. Its pre-biased configuration makes it easy to implement in existing circuits, and its high-performance characteristics make it suitable for demanding applications. The array is easy to mount onto standard circuit boards, and its low noise operation makes it suitable for sensitive applications. The DMA261030R is an excellent solution for those seeking a high-performance BJT array for their circuit designs.
The specific data is subject to PDF, and the above content is for reference
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