DMA2610F0R

DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 5mA, 10V
Base Part Number:	DMA2610
Supplier Device Package:	Mini5-G3-B
Package / Case:	SC-74A, SOT-753
Mounting Type:	Surface Mount
Power - Max:	300mW
Frequency - Transition:	--
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 500µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	10 kOhms
Resistor - Base (R1):	4.7 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	2 PNP - Pre-Biased (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The DMA2610F0R is a pre-biased switching transistor array that is used in a variety of applications, such as RF signal attenuators, amplifying stages and commutators. Produced by STMicroelectronics, these transistors are made of a silicon wafer and use multifinger technology, making them well suited for high-speed, high-performance operations. This article will introduce the application field and working principle of the DMA2610F0R.The DMA2610F0R is capable of switching electrics up to 900 MHz, making it suitable for a range of requirements including communications and automotive electronics. It features a low on-state resistance of 10 Ω and a high switching speed of 28V/ns, making it a great choice for high-speed applications. The transistor array also has a very high breakdown voltage of 500V, allowing the device to switch large loads without the need for additional protection.The DMA2610F0R consists of four NPN transistors: two PNP transistors and two reverse-biased diodes. These components are arranged in a monolithic integrated circuit (IC). The transistors, U1, U2, U3, and U4 are connected in a pseudorealized configuration to create the output transistor, U5. This configuration helps ensure a high switching speed while reducing parasitic capacitance and close-in hysteresis. The PNP transistors, U6 and U7, provide the appropriate biasing to turn the outputs on and off.The working principle of the DMA2610F0R depends on its biasing scheme. When the voltage applied to the PNP transistors, U6 and U7, exceeds a certain threshold, the transistors are forward biased and the output transistors, U1-U5, are turned on. When the voltage is below the threshold, the transistors are reverse biased and the output transistors are turned off. This gives the DMA2610F0R the ability to switch quickly and accurately.The DMA2610F0R has a wide range of applications, primarily in high-speed switching and control circuits. In these circuits, the transistor array can be used to switch between a number of different loads quickly and accurately. It is also suitable for use in RF communication, automotive electronics, and other applications that require fast switching and a high breakdown voltage.In conclusion, the DMA2610F0R is a versatile pre-biased switching transistor array that is suitable for use in a variety of applications. Its low resistance, high switching speed, and high breakdown voltage make it well-suited for high-speed, high-performance operations. Its monolithic integrated configuration helps reduce parasitic capacitance and close-in hysteresis, making it an ideal choice for RF, communications, and automotive electronics applications.

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