DMA501010R Allicdata Electronics

DMA501010R Discrete Semiconductor Products

Allicdata Part #:

DMA501010RTR-ND

Manufacturer Part#:

DMA501010R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS 2PNP 50V 0.1A SMINI5
More Detail: Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 10...
DataSheet: DMA501010R datasheetDMA501010R Datasheet/PDF
Quantity: 9000
Stock 9000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Power - Max: 150mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-SMD, Flat Leads
Supplier Device Package: SMini5-F3-B
Base Part Number: DMA50101
Description

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DMA501010R is a kind of transistor array, specifically Bipolar Junction Transistors (BJTs). It is a type of discrete semiconductor component that provides amplification, switching, and current regulation. It is often referred to as a collection of transistors in a single package, which makes it suitable for more complex applications such as power management and signal processing.

The DMA501010R consists of ten individual transistors, each capable of 135 milliamps at 25 degrees Celsius and 100 volts, with a gain of 1.5 at 150 milliseconds. This allows the device to be used for a range of applications, from low-power to high-power operations. It features a wide bandwidth, low gate charge, low gate resistance, and low ON state resistance.

The Working Principle of the DMA501010R is dependent upon the type of BJT array used. Typically this array is composed of two or more transistors, depending on the number of circuits the array can support. In a full BJT array, each transistor is connected in either a common emitter or a common source configuration. In either configuration, current flows between the emitter and collector of the transistors and is regulated by the amount of voltage applied to the base.

The DMA501010R can be used for a variety of applications, such as signal conditioning, signal isolation, DC/DC conversion, and power management. In signal conditioning applications, the device is often used to amplify, control, or filter high frequency signals. In signal isolation configurations, the component can be leveraged to separate signal paths and reduce signal crosstalk. It is also used in DC/DC conversion to provide a conversion between AC and DC signals. In power management, it can be used to suddenly increase or decrease the current of a circuit, or to switch off a circuit in certain conditions.

In summary, the DMA501010R is a Bipolar Junction Transistor array that is used for a wide range of amplification, switching, and power management applications. It is capable of 135 milliamps at 25 degrees Celsius and 100 volts, with a gain of 1.5 at 150 milliseconds. It features a wide bandwidth, low gate charge, low gate resistance, and low ON state resistance, making it highly suitable for low-power and high-power operations.

The specific data is subject to PDF, and the above content is for reference

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