Allicdata Part #: | DMA5610M0RTR-ND |
Manufacturer Part#: |
DMA5610M0R |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS DUAL PNP SMINI5 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | DMA5610M0R Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.08295 |
6000 +: | $ 0.07792 |
15000 +: | $ 0.07290 |
30000 +: | $ 0.06703 |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD (5 Leads), Flat Lead |
Supplier Device Package: | SMini5-F3-B |
Base Part Number: | DMA5610 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
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The DMA5610M0R is a pre-biased array of transistors designed specifically for high power, low voltage integrated circuit devices. This device is composed of two MOSFETs (metal-oxide-semiconductor field-effect transistors) that are interconnected to form a single unit. The two transistors are composed of the same material and are designed for stationary applications, so that when both transistors are powered on, one will be turned on and the other off. This type of transistor array is typically used in applications such as switching regulated power supplies, DC-to-DC converters, and power amplifiers. It is also well suited for applications requiring low-voltage and high-power switching.
The DMA5610M0R is unique because it has a built-in diode bridge which allows it to operate as both a high power device and as a low voltage device. The built-in diode bridge helps reduce the risk of latch-up or other circuit malfunctions. The low-voltage rating of the device also makes it well suited for battery-powered devices. The two transistors in the DMA5610M0R are designed to work in concert, allowing them to operate over a wide range of voltages from 7 volts up to 46 volts.
The working principle of the DMA5610M0R is based on the NPN and PNP transistors in the array. These transistors are composed of three terminals, one for base current and two for collector current. When the two transistors are both in the same state (e.g. on) and the base current is equal to the collector current, a latch is created. This means that the state of each of the transistors can be maintained, even if the base current is changed. In this way, when one transistor is turned on, the other is also turned on.
The DMA5610M0R can be used in a variety of applications due to its wide voltage range and relatively low power requirements. It can be used in switching regulated power supplies, in DC-to-DC converters, and in power amplifiers. It can also be used to control motors, as the low voltage and current requirements reduce the risk of damage to the motor. Additionally, the DMA5610M0R can be used in battery-powered applications, as the low-voltage rating ensures that the device can operated safely even when using a low internal voltage.
In summary, the DMA5610M0R is a pre-biased array of NPN and PNP transistors designed for high power, low voltage applications. Its built-in diode bridge helps reduce the risk of latch-up and its wide voltage range makes it suitable for a variety of applications. The DMA5610M0R is ideal for motor control applications and other applications requiring low-voltage and high-power switching.
The specific data is subject to PDF, and the above content is for reference
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