DMA561040R

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	--
Power - Max:	150mW
Mounting Type:	Surface Mount
Package / Case:	5-SMD, Flat Leads
Supplier Device Package:	SMini5-F3-B
Base Part Number:	DMA56104

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Introduction

DMA561040R is a pre-biased, low-noise field-effect transistor (FET) array, with outstanding characteristics and high performance. This device is formed with four monolithic N-Channel FETs integrated in a single package, and is suitable for applications such as high speed analog switches, high power amplifiers and other high performance circuits. It has a low voltage, low current draw gate drive, providing an ideal driver for high frequency circuits.

Application field

The DMA561040R is mainly used in high performance analog switches, high power amplifiers, and other high speed circuit applications. Its high current capability and low noise make it ideal for high current analog switching applications such as power supplies, audio power amplifiers and analog computers.The device can provide high bandwidth gain in amplifiers that require very low noise performance, as well as a low on-state resistance in high current switches. It is also suitable for applications that need high impedance isolation between input and output, such as in programmable logic devices (PLDs).

Working principle

The DMA561040R works on the principle of bipolar junction transistor (BJT) array. A BJT can be thought of as having three sections: an emitter, a collector and a base. The DMA561040R contains four such transistors, and each transistor is connected to an individual output.When the gate voltage is applied to each transistor in the array, current flows from the emitter to the collector and a voltage is created between the collector and the emitter. The amount of current is determined by the current gain of the transistor, which is known as the "Hfe". When the amounts of current are summed up in the circuit, it creates the bipolar junction transistor array.The DMA561040R has an on-state resistance of less than 0.1 ohms and an off-state resistance of 10 MOhms. It also operates at high temperatures, up to 150 degrees Celsius. This makes the device suitable for high power applications that generate large amounts of heat.

Advantage of DMA561040R

The DMA561040R provides several advantages over other transistors. It has a low voltage, low current gate drive, which makes it ideal for high frequency circuit applications. It also has low on-state resistance and can handle high temperatures. Its high current capability makes it suitable for high power applications.Finally, the device has high noise immunity. Its low gate capacitance reduces the probability of electromagnetic interference and crosstalk. It is also capable of high peak current output, which makes it fit for a variety of high power audio applications.

Conclusion

The DMA561040R is a pre-biased, low-noise FET array, formed with four monolithic N-Channel FETs integrated in a single package. It has a low voltage, low current draw gate drive, providing an ideal driver for high frequency circuits. It is mainly used in high performance analog switches, high power amplifiers, and other high speed circuit applications. The device has low on-state resistance, high current capability, and high noise immunity. Additionally, it is able to operate at high temperatures, and manage to produce large peak current output.

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