DMC4029SK4-13 Allicdata Electronics
Allicdata Part #:

DMC4029SK4-13DITR-ND

Manufacturer Part#:

DMC4029SK4-13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N/P-CH 40V 8.3A TO252
More Detail: Mosfet Array N and P-Channel Complementary 40V 8.3...
DataSheet: DMC4029SK4-13 datasheetDMC4029SK4-13 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.3A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: TO-252-4L
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

DMC4029SK4-13 Application Field and Working Principle Overview

DMC4029SK4-13 is a high voltage N-channel and matched P-channel Power Field Effect Transistor (FET) array produced by Infineon Technologies. The device features four n-type and four p-type enhancement mode transistors in a single dual-in-line package. Each FET has a current rating of 4 amperes and is designed for low on-state resistance, high speed switching and good power dissipation. The maximum drain-source voltage rating is 25 volts, and the maximum gate threshold voltage is 4 volts.

DMC4029SK4-13 is an ideal choice for applications requiring a reliable and high-performance FET array with a wide range of voltage and current ratings. It is suitable for use in high voltage, high speed motor control, audio power amplifiers and switching applications. The four FETs in the array can be used to build a four-phase motor drive or to increase the current rating of a single FET switch. This device also offers higher efficiency in energy conversion applications such as power factor correction, power inverters and motor drives.

Working Principle of DMC4029SK4-13

An electronic switch, such as the DMC4029SK4-13, is an arrangement of transistors and other components which controls the flow of electric current between two or more points. A FET array is a type of electronically controlled switch and is the most commonly used switch in high-frequency power circuits. FET arrays can be used to switch large currents or voltages and can be operated at speeds far higher than other types of switches.

The working principle of the DMC4029SK4-13 is based on the operation of a metal-oxide-semiconductor FET (MOSFET). In a MOSFET, the gate voltage controls the drain-source current by operating as an electric field-effect. When the gate voltage is higher than the threshold voltage, electrons are attracted to the gate and the drain-source current increases. The FETs in the DMC4029SK4-13 are enhancement mode FETs and require an applied gate voltage to turn on the device.

The DMC4029SK4-13 is a four-FET array with separate control of each FET. The four FETs in the array can be controlled individually using four separate gate-source lines. This allows the device to be used as a single switch, a four-phase motor drive, or to increase the current rating of a single FET. The device also features an over-temperature protection circuit which shuts off the device if the temperature exceeds a certain threshold.

Conclusion

The DMC4029SK4-13 is an ideal choice for applications requiring reliable and high-performance FET arrays with a wide range of voltage and current ratings. It can be used for high voltage, high speed motor control, audio power amplifiers and switching applications as well as for power factor correction, power inverters and motor drives. The four FETs in the array can be controlled individually using four separate gate-source lines, allowing the device to be used as a single switch or a four-phase motor drive. The device also features an over-temperature protection circuit which shuts off the device if the temperature exceeds a certain threshold.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "DMC4" Included word is 10
Part Number Manufacturer Price Quantity Description
DMC4029SSD-13 Diodes Incor... 0.0 $ 1000 MOSFET N/P-CH 40V 7A/5.1A...
DMC4040SSDQ-13 Diodes Incor... 0.28 $ 1000 MOSFET N/P-CH 40V 7.5A 8S...
DMC4029SSDQ-13 Diodes Incor... 0.0 $ 1000 MOSFET N/P-CH 40V 7A/5.1A...
DMC4015SSD-13 Diodes Incor... 0.34 $ 2500 MOSFET N/P-CH 40V 8.6A/6....
DMC4040SSD-13 Diodes Incor... -- 2500 MOSFET N/P-CH 40V 6.8A 8S...
DMC4050SSD-13 Diodes Incor... -- 15000 MOSFET N/P-CH 40V 5.3A 8S...
DMC4050SSDQ-13 Diodes Incor... -- 2500 MOSFET N/P-CH 40V 5.3A 8S...
DMC4028SSD-13 Diodes Incor... -- 2500 MOSFET N/P-CH 40V 8SOICMo...
DMC4047LSD-13 Diodes Incor... -- 1000 MOSFET N/P-CH 40V 7A/5.1A...
DMC4029SK4-13 Diodes Incor... -- 1000 MOSFET N/P-CH 40V 8.3A TO...
Latest Products
AO4822L_101

MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...

AO4822L_101 Allicdata Electronics
SI5944DU-T1-GE3

MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...

SI5944DU-T1-GE3 Allicdata Electronics
SI4973DY-T1-GE3

MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...

SI4973DY-T1-GE3 Allicdata Electronics
NTMD6601NR2G

MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...

NTMD6601NR2G Allicdata Electronics
BUK7K6R2-40E/CX

MOSFET 2N-CH 56LFPAKMosfet Array

BUK7K6R2-40E/CX Allicdata Electronics
PHN210,118

MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...

PHN210,118 Allicdata Electronics