DMC4029SSDQ-13

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DMC4029SSDQ-13 is an N-channel power metal–oxide–semiconductor field-effect transistor (MOSFET) array manufactured by Diodes Incorporated. It is part of their TrenchFET® power MOSFET products which are suitable for use in high-frequency switching applications. This particular device is a quad-channel, low threshold power MOSFET array, featuring low on-resistance, fast switching speed, and high-voltage capability.

The DMC4029SSDQ-13 is constructed using a lateral N-channel DMOS process which ensures high performance, low on-resistance, excellent thermal characteristics, and optimized inductive switching characteristics. The gate electrodes are connected to the source of each channel in order to facilitate connection to the gate and can be provided in either a through-hole (DQ-13) or a surface mount (DP-13) format. The device is rated to handle peak gate voltages of up to 20 volts, with a maximum on-resistance per channel of 0.08 ohms.

The product\'s wide range of features makes it suitable for a wide range of high-frequency switching applications such as power management and conversion for portable devices, power supply control for mobile phones, logic level switching for gate drivers, and gate driving for embedded audio amplifiers.

The DMC4029SSDQ-13 has an operating temperature range of –55°C to +125°C and is housed in a 4mm x 4mm, 14-pin QFN package. The package is both moisture and halogen-free, making it RoHS compliant.

Working Principle

The basic operation of the DMC4029SSDQ-13 follows that of a typical power MOSFET array. It forms a four-channel connection between drain and source which is controlled by the gate. When the gate is left open, the current passes freely between the source and drain, allowing both on and off switching between the two. When the gate is driven with a signal of appropriate voltage, typically ranging from 3V to 20V, the current between the source and drain is inhibited, resulting in an off state for the device.

In addition to its typical power MOSFET operations, the device also employs high switching speeds due to its TrenchFET® technology. This ensures that the device can switch between the two states very quickly, which is beneficial in applications that require high-frequency switching.

The DMC4029SSDQ-13 also features a low on-resistance of just 0.08 ohms per channel, which allows for low channel-to-channel switch leakage current, ensuring high accuracy in applications where precision is needed.

Safety Features

The device also has safety features that make it suitable for various industrial applications. It has an integrated gate clamp which ensures that the total gate charge is kept below the maximum specified current level of the device. It also has a thermal shutdown circuit which will shut down the device if the temperature exceeds the maximum rated temperature of the device.

The device is also protected against electrostatic discharge (ESD) up to 4kV. This is especially useful for applications where the device may be subjected to high levels of ESD or high voltage surges.

Conclusion

The DMC4029SSDQ-13 is an excellent power MOSFET array from Diodes Incorporated. It features low on-resistance, fast switching speed, and high-voltage capability, making it suitable for high-frequency switching applications such as power management and conversion for portable devices, power supply control for mobile phones, logic level switching for gate drivers, and gate driving for embedded audio amplifiers.

The device also has safety features such as integrated gate clamp and thermal shutdown circuit to ensure safe operation of the device and protection against ESD. It is housed in a 4mm x 4mm, 14-pin QFN package, and rated to handle peak gate voltages of up to 20 volts.

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