DMC4050SSDQ-13 Allicdata Electronics
Allicdata Part #:

DMC4050SSDQ-13DITR-ND

Manufacturer Part#:

DMC4050SSDQ-13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N/P-CH 40V 5.3A 8SO
More Detail: Mosfet Array N and P-Channel Complementary 40V 5.3...
DataSheet: DMC4050SSDQ-13 datasheetDMC4050SSDQ-13 Datasheet/PDF
Quantity: 2500
Stock 2500Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 37.56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1790.8pF @ 20V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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DMC4050SSDQ-13 is a MOSFET array that consists of four N-Channel Enhancement Mode Field-Effect Transistors (FETs). It is part of the Texas Instruments Dual N-Channel MOSFET Array series of devices and is particularly useful for applications that require high-volume switching, such as power management and motor control. This particular MOSFET array also features superior protection features, such as over-voltage, over-current, and ESD protection.

The MOSFET array consists of four N-Channel FETs that are arranged in two dual-channel configurations. Each dual-channel configuration consists of two FETs, with one FET in a source-follower configuration and the other in an inverter arrangement. The dual-channel arrangement provides improved current-handling capabilities and greater flexibility for switching applications. The DMC4050SSDQ-13 also has an integrated gate resistor and a low capacitance Diode which ensures that the gate stress is reduced, allowing for higher switching frequencies.

The MOSFET array has some typical applications in the areas of power management, motor control, and switching. It can be used to design circuits that require the efficient manipulation of power or voltage. It is also useful for precision switching applications, such as in AC power converters, or in DC-DC converters. In these applications, the MOSFET array can be used to switch power or voltage to provide precise control of the device.

The working principle of a MOSFET array is relatively simple. A voltage applied to the gate of the FET will cause a current to flow from the drain to the source. This current is then used to switch power or voltage in the circuit, depending on the application. The MOSFET array offers improved switching performance over traditional FETs because it requires lower gate voltages and ensures faster switching speeds.

In addition to the improved switching performance, the DMC4050SSDQ-13 also provides superior protection features. The gate resistor and low-capacitance Diode both help to reduce the gate-to-source voltage and extend the device’s lifetime. It also provides superior ESD protection, which is important in applications involving high voltages or large transients. Additionally, the device is designed with a high temperature range, which makes it suitable for operating in extreme temperature environments.

In conclusion, the DMC4050SSDQ-13 is a powerful and versatile MOSFET array that is ideal for applications that require precise control of power or voltage. It is designed with superior protection features such as over-voltage, over-current, and ESD protection, which makes it suitable for use in a variety of demanding environments. Furthermore, it has two dual-channel configurations, which improve current-handling capabilities and provide more flexibility for switching applications.

The specific data is subject to PDF, and the above content is for reference

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