DMC4047LSD-13

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The DMC4047LSD-13 is Transistors - FETs, MOSFETs - Arrays. This device offers higher density that the equivalent MLX devices and it has been designed to enable faster switching and a greater energy efficiency than an equivalent FET. This device is ideal for applications such as gate drive, low-side switching and gate drive isolation in automotive circuits.

The DMC4047LSD-13 consists of four independent channels. Each channel provides up to 0.7 A of source or sink current. The device is tested at its maximum ratings of -45 V on the drain and 35 V on the drain-source. It is compliant with the IEC 60747-1 standard for peak current ratings up to 12 A and its performance has been verified for a wide range of load currents.

The main features of the DMC4047LSD-13 include:

• High speed switching
• Low power consumption
• High temperature range operation
• Internal Voltohmic transistors for each channel
• Reverse Load current protection
• High stability of input and output impedance

The device operates by utilizing a voltage that is applied to its gate to control the current flow through its drain and source pins. When the gate voltage is at its most positive value, the drain-source junction is forward biased and current can flow between the drain and source. When the gate voltage is less than the threshold voltage of the device, the drain-source junction is reverse biased and the device is turned off. The drain-source voltage should be equal or greater than the resulting current trip point.

In order to maximize efficiency and minimize power consumption, the DMC4047LSD-13 bias voltage should be minimized and the rate of rise and fall of the applied gate voltage should be slow. This helps to reduce standing currents in the device and minimize power consumption.

The DMC4047LSD-13 is a four-channel MOSFET array that is ideal for applications where high density, high speed switching, low power consumption and high temperature range operation are required. The device provides up to 0.7 A of source or sink current per channel and is capable of operating at -45 V on the drain and 35 V on the drain-source. The device is tested at its maximum ratings and has been verified to be compliant with the IEC 60747-1 standard for peak current ratings up to 12 A. It is designed to enable fast switching and greater energy efficiency than FETs and can be used in automotive circuits or other gate drive or low-side switching applications.

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