DMC504010R Allicdata Electronics

DMC504010R Discrete Semiconductor Products

Allicdata Part #:

DMC504010RTR-ND

Manufacturer Part#:

DMC504010R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS 2NPN 50V 0.1A SMINI6
More Detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 10...
DataSheet: DMC504010R datasheetDMC504010R Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Power - Max: 150mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: SMini6-F3-B
Base Part Number: DMC50401
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Description

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The DMC504010R is a high performance, high voltage and high current bipolar junction transistor (BJT) array which offers a plethora of practical applications due to its excellent features. This device can be used for controlling the power in high power circuits, providing high current gain, and providing a low-cost solution to various switching requirements. It also provides excellent linearity and high switching speed. The versatility of this transistor array makes it suitable for a wide array of applications, ranging from analog and digital signal processing to signal conditioning and power management.

The DMC504010R array comprises of two 20 pin DIP packages which are connected together via a single copper trace. The first package contains three NPN transistors and the second package contains two transistors, one PNP and one NPN. The NPN transistors are connected in a common-emitter configuration and the PNP transistor is connected in common-base configuration. Each of the transistors can handle currents up to 10 A, with a voltage range of up to 80 V. This array has an extremely low forward voltage drop, making it particularly suitable for switching high currents with low power consumption. Additionally, the device offers excellent continuity and stability due to its integrated circuit design.

The working principle of the DMC504010R is based on the fact that a current flows through the transistor when its base voltage is higher than its emitter voltage. When the base voltage is increased, the current through the transistor increases due to the increased input resistance. This, in turn, increases the output current and thus the power dissipation. This increase in power is used to drive the external loads and to provide the required current for the circuit.

The DMC504010R is a versatile transistor array which can be used in a variety of applications. It can be used as a solid-state switch for high power circuits, as an amplifier for linear power sources, as a current gain for switching applications and for controlling the voltage in voltage-controlled switches. It offers excellent linearity and high switching speed. Additionally, it can be used as a preamplifier in audio and video systems and for frequency division in telecommunication systems.

Due to its excellent features and its low cost, the DMC504010R makes it suitable for a wide range of applications. Its low power consumption allows it to be used in applications where space and energy efficiency are important. It is also ideal for switching applications, including those with high power or high frequencies. The versatility and versatility of this device make it an excellent choice for any application requiring a low-cost, high performance, high voltage and high current bipolar junction transistor array.

The specific data is subject to PDF, and the above content is for reference

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