DMC561000R Allicdata Electronics
Allicdata Part #:

DMC561000RTR-ND

Manufacturer Part#:

DMC561000R

Price: $ 0.09
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS 2NPN PREBIAS 0.15W SMINI5
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: DMC561000R datasheetDMC561000R Datasheet/PDF
Quantity: 6000
3000 +: $ 0.08295
6000 +: $ 0.07792
15000 +: $ 0.07290
30000 +: $ 0.06703
Stock 6000Can Ship Immediately
$ 0.09
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: --
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Lead
Supplier Device Package: SMini5-F3-B
Base Part Number: DMC56100
Description

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The DMC561000R pre-biased, bipolar transistors array devices are found to be extremely helpful in both linear circuits that require feedback, as well as nonlinear circuits, where feedback is not required. This is because of their wide range of amplification and their ability to provide good linearity, enabling complex signals to be handled properly. As one of the simplest form of linear device, they are used in a variety of applications, such as in the fields of aerospace, automotive, optoelectronic, and digital applications.The DMC561000R is a type of BJT (Bipolar Junction Transistor) pre-biased transistor array. It has nine transistors that are pre-biased with a shared emitter, base, and collector. Each individual transistor may then be individually enabled by applying a separate control for each one. It also features an integrated protection circuit in order to help prevent accidental damage to the component from over-current and thermal runaway conditions. These features make this device an excellent choice for a variety of circuit designs which require multiple transistors in one component.The DMC561000R is typically used for power switching and amplifier applications, as it is well suited for high-speed switching and can handle high current. It is also used for driving optoelectronic components such as LEDs, controlled by integrated optical systems. Since it has nine individually addressable transistors, it can be used to generate a total of nine different control signals in a single component. Additionally, the integrated protection circuit helps to avoid thermal runaway or over current conditions. In terms of its working principle, the component utilizes the BJT (Bipolar Junction Transistor) architecture. It consists of three terminals: emitter, base, and collector. When current is applied to the base terminal, it controls the current to the collector terminal by acting like a switch. A higher current applied to the base causes the collector current to increase, and a lower current applied to the base causes the collector current to decrease. This kind of switching can be used in a variety of applications, such as audio amplifiers, power switches, and so on.In conclusion, the DMC561000R pre-biased bipolar transistors array devices are widely used in a variety of linear and nonlinear circuit designs. They feature nine individually addressable transistors, making them ideal for power switching and amplifier applications. Additionally, their wide amplification range and good linearity enables complex signals to be handled properly. As such, these devices prove to be an incredibly useful component for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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