DMC562000R Allicdata Electronics
Allicdata Part #:

DMC562000RTR-ND

Manufacturer Part#:

DMC562000R

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS 2NPN PREBIAS 0.15W SMINI5
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: DMC562000R datasheetDMC562000R Datasheet/PDF
Quantity: 1000
3000 +: $ 0.06144
6000 +: $ 0.05803
15000 +: $ 0.05291
30000 +: $ 0.04949
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: --
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 5-SMD, Flat Leads
Supplier Device Package: SMini5-F3-B
Base Part Number: DMC56200
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DMC562000R is a high voltage, 2-phase, super high precision full-bridge MOSFET pre-biased array. A pre-biased solution helps eliminate the need to create a bias supply and eliminates the waste of energy and money creating multiple suppliers and voltage points. The DMC562000R is low RDS-on, voltage controlled, and its fully integrated bridge configuration enables easy scalability of the power stages.

The DMC562000R provides precise switching and gate control for both high isolation and low side current sensing. Its high accuracy self-biased structure helps to maintain high accuracy gate drive current and improved reliability. The low RDS-on characteristics of the device also reduce switching losses, allowing for higher performance and higher reliability.

The DMC562000R consists of 2 bipolar npn arrays and 2 pFET (lateral) npn power transistors connected in the same package. The transistor arrays are pre-biased and provide a high voltage sine or square wave switching. Each array consists of 7 transistors and provides high linearity, low output offset and high precision. The transistors are also optimized for high voltage and high current applications. The transistors are very rugged and temperature stable, allowing them to be used in high temperature environments.

DMC562000R’s wide range of voltage controlled gate drive enables easy scalability of the power stages. The integrated N-channel MOSFETs allow for high efficiency and low switching losses, while the 4:1 matching ratio reduces output offset. The device is protected against ESD and over-voltage conditions and is robust against short circuit and over-power conditions. The device is also designed for operation in fast transient environments.

DMC562000R has a wide range of applications, including automotive, industrial and consumer applications. In automotive applications, the DMC562000R can be used for powertrain and exhaust systems, battery management systems and fuel pumps. In industrial and consumer applications, the DMC562000R can be used for LED lighting, LED test systems and solar cell control. The DMC562000R has also been designed for medical and data storage applications, such as medical imaging and storage systems.

The DMC562000R is an ideal pre-biased solution for high efficiency and reliability applications. The wide range of operating voltages, flexibly controlled gate drive, and high frequency operation create a high performance and efficient power solution. The device is also robust against short-circuit and over-power conditions and provides precise switching and gate control. The combination of all of these features makes the DMC562000R an excellent choice for high voltage and high current applications.

The specific data is subject to PDF, and the above content is for reference

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