Allicdata Part #: | DMC562000RTR-ND |
Manufacturer Part#: |
DMC562000R |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS 2NPN PREBIAS 0.15W SMINI5 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | DMC562000R Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.06144 |
6000 +: | $ 0.05803 |
15000 +: | $ 0.05291 |
30000 +: | $ 0.04949 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | 5-SMD, Flat Leads |
Supplier Device Package: | SMini5-F3-B |
Base Part Number: | DMC56200 |
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The DMC562000R is a high voltage, 2-phase, super high precision full-bridge MOSFET pre-biased array. A pre-biased solution helps eliminate the need to create a bias supply and eliminates the waste of energy and money creating multiple suppliers and voltage points. The DMC562000R is low RDS-on, voltage controlled, and its fully integrated bridge configuration enables easy scalability of the power stages.
The DMC562000R provides precise switching and gate control for both high isolation and low side current sensing. Its high accuracy self-biased structure helps to maintain high accuracy gate drive current and improved reliability. The low RDS-on characteristics of the device also reduce switching losses, allowing for higher performance and higher reliability.
The DMC562000R consists of 2 bipolar npn arrays and 2 pFET (lateral) npn power transistors connected in the same package. The transistor arrays are pre-biased and provide a high voltage sine or square wave switching. Each array consists of 7 transistors and provides high linearity, low output offset and high precision. The transistors are also optimized for high voltage and high current applications. The transistors are very rugged and temperature stable, allowing them to be used in high temperature environments.
DMC562000R’s wide range of voltage controlled gate drive enables easy scalability of the power stages. The integrated N-channel MOSFETs allow for high efficiency and low switching losses, while the 4:1 matching ratio reduces output offset. The device is protected against ESD and over-voltage conditions and is robust against short circuit and over-power conditions. The device is also designed for operation in fast transient environments.
DMC562000R has a wide range of applications, including automotive, industrial and consumer applications. In automotive applications, the DMC562000R can be used for powertrain and exhaust systems, battery management systems and fuel pumps. In industrial and consumer applications, the DMC562000R can be used for LED lighting, LED test systems and solar cell control. The DMC562000R has also been designed for medical and data storage applications, such as medical imaging and storage systems.
The DMC562000R is an ideal pre-biased solution for high efficiency and reliability applications. The wide range of operating voltages, flexibly controlled gate drive, and high frequency operation create a high performance and efficient power solution. The device is also robust against short-circuit and over-power conditions and provides precise switching and gate control. The combination of all of these features makes the DMC562000R an excellent choice for high voltage and high current applications.
The specific data is subject to PDF, and the above content is for reference
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