DMC561060R Allicdata Electronics

DMC561060R Discrete Semiconductor Products

Allicdata Part #:

DMC561060RTR-ND

Manufacturer Part#:

DMC561060R

Price: $ 0.09
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS 2NPN PREBIAS 0.15W SMINI5
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: DMC561060R datasheetDMC561060R Datasheet/PDF
Quantity: 3000
3000 +: $ 0.08295
6000 +: $ 0.07792
15000 +: $ 0.07290
30000 +: $ 0.06703
Stock 3000Can Ship Immediately
$ 0.09
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: --
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Lead
Supplier Device Package: SMini5-F3-B
Base Part Number: DMC56106
Description

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DMC561060R is a pre-biased array of transistors devices developed by Siemens AG. It is designed to be used in multiple applications where devices with arrayed structures are required, like analog and digital circuits. This device belongs to the family of bipolar junction transistors, or BJT, which are two-terminal semiconductor current-controlled devices. They are usually operated in a linear mode in many electronic circuits, and this application field is their primary specialization.

DMC561060R features a power output directed mainly towards the applications of power switching and driver for various types of loads, such as relays and motors. Their structure is composed of many elements in an array, like three differently structured transistors, allowing them to handle up to 900V and up to 10A. Those are an NPN power transistor, a PNP power transistor and a Zener diode for overvoltage protection. This device also features an integrated diode clamped output, improving the linearity and reliabilty of the device.

The working principle of DMC561060R mainly starts when a sufficiently large current is passed through the base-emitter junction, in neighboring components. When this happens, the base-collector junction of the adjacent component is turned on thus providing a high gain current amplification. This is how this device works in common-emitter configuration as a pre-biased array. It is important to note here that the current ratings of this device are much higher than of a single device, as long as the applied voltage is same. This helps in reducing the power dissipation and providing more efficient current switch for multiple applications.

In conclusion, DMC561060R is a pre-biased array of NPN and PNP transistors which have been used in multiple applications. The array is composed of three differently structured transistors and supports 900V up to 10A. This device works on the main principle of two or more transistors in common-emitter configuration, providing output current much higher than single transistor. Thus, it is used in power switching and driver applications, thus making it one of the most suitable device in the field of transistors.

The specific data is subject to PDF, and the above content is for reference

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