DMC5640M0R Allicdata Electronics
Allicdata Part #:

DMC5640M0RTR-ND

Manufacturer Part#:

DMC5640M0R

Price: $ 0.09
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS DUAL NPN SMINI6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: DMC5640M0R datasheetDMC5640M0R Datasheet/PDF
Quantity: 1000
3000 +: $ 0.08295
6000 +: $ 0.07792
15000 +: $ 0.07290
30000 +: $ 0.06703
Stock 1000Can Ship Immediately
$ 0.09
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: --
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: SMini6-F3-B
Base Part Number: DMC5640
Description

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The DMC5640M0R is a rapid-switching NPN transistor array in pre-biased packages that offer improved performance over general-purpose silicon devices. This device features an integrated circuit design in an array of n-channel transistors connected to form a single-stage common-base amplifier. It is used in applications requiring fast switching times such as DC-DC converters, pulse-width modulation, motor control, switching power supplies, and audio applications.

The device contains two NPN transistors that are connected in series. The emitter of the first transistor is connected to the collector of the second transistor and the collector of the first transistor is connected to the emitter of the second transistor. The middle point of this connection is the output. The base of each transistor is connected to a common point, which is connected to the gate. The device is pre-biased to a specific voltage, usually 12V, which is the rated base-emitter voltage.

The output voltage is a combination of the input voltage and the pre-biased voltage. The magnitude of the output voltage is determined by the magnitude of the applied input voltage. An increase in the input voltage will cause the output voltage to increase. This is known as voltage-to-current conversion. The output current is determined by the base current, which is proportional to the input voltage. This is converted to an output current that is higher than the input current.

The main advantage of the DMC5640M0R is its small size and high switching speed. The device is rated for a maximum switching speed of 1KHz and offers a low on-state resistance of 1.0 ohms. This device is also very efficient due to its integrated circuit design. It is fully tested and includes additional protection features such as over-voltage protection, thermal shut-off, and transient protection.

The DMC5640M0R is designed for use in a variety of electronic applications such as switching power supplies, DC-DC converters, pulse-width modulators, motor control, audio applications and more. It can also be used for automating the flow of electricity in processing factories, for powering electric motors, for controlling the temperature of objects, and for controlling the speed of AC motors. The device is widely used in the automotive industry, including in hybrid and electric vehicles, for their exceptional switching speed and low power consumption. The device also offers a wide range of control and protection features.

The main advantage of the DMC5640M0R is its small size and high switching speed. The device is rated for a maximum switching speed of 1KHz and offers a low on-state resistance of 1.0 ohms. This device is also very efficient due to its integrated circuit design. It is fully tested and includes additional protection features such as over-voltage protection, thermal shut-off, and transient protection.

In conclusion, the DMC5640M0R is a rapid switching NPN transistor array in pre-biased packages that offer improved performance over general-purpose silicon devices. This device features an integrated circuit design that is used in a variety of electronic applications. It is suitable for applications requiring fast switching times such as DC-DC converters, pulse-width modulation, motor control, switching power supplies, and audio applications. This device is highly efficient and features additional protection features such as over-voltage protection, thermal shut-off, and transient protection.

The specific data is subject to PDF, and the above content is for reference

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