DMC6040SSD-13 Allicdata Electronics
Allicdata Part #:

DMC6040SSD-13DITR-ND

Manufacturer Part#:

DMC6040SSD-13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N/P-CH 60V 5.1A/3.1A 8-SO
More Detail: Mosfet Array N and P-Channel 60V 5.1A, 3.1A 1.24W ...
DataSheet: DMC6040SSD-13 datasheetDMC6040SSD-13 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.1A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Power - Max: 1.24W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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The DMC6040SSD-13, also known as the monolithic analog array, is a type of transistor composed of multiple terminal semiconductor layers of varying resistive states. It is primarily used in signal-processing circuits for audio, communications, and medical equipment, as well as for signal mixing, audio level control, and data communications. The DMC6040SSD-13 is a three-terminal, p-channel MOSFET (metal-oxide semiconductor field-effect transistor) array made from silicon-on-insulator structures. It is designed to optimize low current-pulsed operation and provides good switching performance with high durability.

The array is composed of two complementary pairs of NMOS (n-type metal-oxide semiconductor) and PMOS (p-type metal-oxide semiconductor) transistors with two active gates. Each pair consists of two switching transistors with an integrated series resistor for crossover protection. The NMOS pair is designed for a low-current-pulsed operation level that has very low on-resistances (<2Ω). The PMOS pair has a much higher on-resistance in order to maximize robustness, allowing it to switch voltages in minute regions. The resistor connected between the gate and the source of each transistor creates a voltage offset, inducing a negative resistance shift in the transistor. This results in an increased switching frequency and greater switching times.

The MOSFET array provides a highly efficient current-pulsed switching mechanism since it can reduce the off-state voltage across the device, reducing the operating current of the transistors and increasing the efficiency. The array also provides superior immunity to radiated EMI (electromagnetic interference) due to its low-capacitance and low-impedance characteristics. This makes the device suitable for use in high-speed data communication, video processing, and other electrically demanding applications.

The DMC6040SSD-13 MOSFET array’s main application is for the implementation of high-performance, low-cost analog signal processing circuits. It is mainly used in data communication, video processing, and audio circuits. The device also has excellent performance as a driver for LED (light-emitting diode) and LCD (liquid crystal display) displays. It is also used for data line level control and memory protection. Due to its low on-resistance, the device is well-suited for the implementation of current-sensing, current-measuring, and current-state monitoring applications. Moreover, due to its high voltage endurance and wide temperature range, it is also suitable for use in harsh environmental conditions.

In conclusion, the DMC6040SSD-13 is a three-terminal, p-channel MOSFET array mainly used in data communication, video processing, and audio circuits. It is designed to optimize low current-pulsed operation, and its low on-resistance and high voltage endurance make it a great choice for a variety of applications. It offers superior immunity to radiated EMI and is extremely reliable and low-cost.

The specific data is subject to PDF, and the above content is for reference

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