DMC6040SSDQ-13

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N and P-Channel Complementary
FET Feature:	Standard
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	5.1A (Ta)
Rds On (Max) @ Id, Vgs:	40 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	20.8nC @ 30V
Input Capacitance (Ciss) (Max) @ Vds:	1130pF @ 15V
Power - Max:	1.24W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

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The DMC6040SSDQ-13 is an advanced device from the DMC6040SSDQ-13 range of vertical double dual-gate MOSFET arrays. This device is specifically designed for RF and analog applications, with low-noise, variable voltage, and low power consumption. In this article we will discuss the application field and working principle of this device.ApplicationsThe DMC6040SSDQ-13 provides superior performance and versatility. This device is suitable fornumerous applications in the fields of RF, audio and instrumentation, including:• RF Amplifiers: The low noise and high current capability of the device makes it suitable for RF amplifiers, such as:o FM transmitterso Low-noise amplifierso High speed small signal amplifierso Preselector monitoring amplifiers • Audio: Due to its low noise characteristics, the DMC6040SSDQ-13 is suitable for use as an audio amplifier. It can be used for a wide range of applications, such as:o Audio systemso Professional audio equipmento Hearing aids• Industrial: The device can be used in industrial applications, such as:o Sensorso Motor control systemso Robotics• Instrumentation: The device offers high accuracy and stability, making it suitable for a variety of instrumentation applications, including:o Analytical instrumentso Medical deviceso Test equipmentWorking PrincipleThe DMC6040SSDQ-13 array is composed of four double-gate MOSFETs (metal oxide semiconductor field effect transistors). Each transistor hastwo gates, a source and a drain. The gates are connected to one another in parallel and the source is connected to the drain. When a voltage is applied across the gate terminals, electrons are attracted to the gate and move from the source to the drain. This results in an electrical current flowing across the transistors.The four transistors in the DMC6040SSDQ-13 array work together in a complementary fashion. When one transistor is in the “on” state, the other is in the “off” state. This helps to reduce distortion and boosts the device’s overall performance.ConclusionThe DMC6040SSDQ-13 is an advanced device that provides superior performance and versatility across a wide range of applications. This device is specifically designed for RF and analog applications, with low-noise, variable voltage, and low power consumption. The device consists of four double-gate MOSFETs, which work together in a complementary fashion, reducing distortion and boosting performance.

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