DMC6070LND-7 Allicdata Electronics
Allicdata Part #:

DMC6070LND-7-ND

Manufacturer Part#:

DMC6070LND-7

Price: $ 0.26
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N/P-CH 60V 8POWERDI
More Detail: Mosfet Array N and P-Channel 60V 3.1A, 2.4A 1.4W S...
DataSheet: DMC6070LND-7 datasheetDMC6070LND-7 Datasheet/PDF
Quantity: 1000
2000 +: $ 0.23112
Stock 1000Can Ship Immediately
$ 0.26
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8
Description

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The DMC6070LND-7 is a simple and efficient array of MOSFET power transistors that is used in numerous commercial, industrial, and consumer applications. The MOSFET (Metal–Oxide–Semiconductor Field Effect Transistor) is a transistor consisting of a semiconductor material with at least three terminals for connection to an external circuit. In this array, the DMC6070LND-7 contains two MOSFETs, with two separate gates and two separate source terminals. It is the only power transistor array in its class to offer such low-resistivity and low-power characteristics.

The DMC6070LND-7 is used in a wide variety of applications, including communications and telecommunications, computer, consumer electronic, automotive, and industrial control. Its applications are particularly popular in particular for high power, high efficiency power handling applications, such as in microwave ovens and lights.

When it comes to working principles, the DMC6070LND-7 is a low-power, low-resistive array of MOSFETs. Its two separate gates are operated by two separate source terminals. The MOSFET operates by a process known as “depletion”. This is the result of a positive voltage applied to one of the narrow sides of the MOSFET and a negative voltage applied to the other side. This establishes a depletion field across the MOSFET, and it is the force exerted by this field that affects the MOSFET’s performance. The depletion field is indexed by its “charge density”, which is an indicator of how much current is passing through the MOSFET when the gate voltage is applied.

Furthermore, the DMC6070LND-7 takes advantage of an operating principle called “channel injection” which is immediately sensed by the current through the device. This current is supplied by two separate source terminals and it reacts to a voltage applied to the gate of the MOSFET, creating the depletion field. That field is modulated by the “charge density” of the MOSFET, and can be used to provide stable performance in power applications.

The MOSFET array ensures a reliable, high-efficiency power performance. Its high charge density allows for high resistance and low power dissipation. Additionally, its low-resistivity enables it to provide both low-power and high-efficiency performance in a wide range of applications. In addition, the MOSFET array has a reliable design that is suitable for a variety of operating temperatures.

In conclusion, the DMC6070LND-7 is a highly efficient array of MOSFETs that is suitable for a wide range of commercial, industrial, and consumer applications. Its low-resistivity and low-power characteristics make it an ideal choice for high power and high efficiency applications. Moreover, its reliable design enables it to operate in a wide range of operating temperatures. It is also one of the only power transistor arrays in its class to offer such low resistivity and low-power characteristics, making it a compelling choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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