
Allicdata Part #: | DMC6070LFDH-7DITR-ND |
Manufacturer Part#: |
DMC6070LFDH-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N/P-CH 60V V-DFN3030-8 |
More Detail: | Mosfet Array N and P-Channel 60V 3.1A, 2.4A 1.4W S... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 3.1A, 2.4A |
Rds On (Max) @ Id, Vgs: | 85 mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 11.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 731pF @ 20V |
Power - Max: | 1.4W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-WDFN |
Supplier Device Package: | V-DFN3030-8 |
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The DMC6070LFDH-7 is a discrete MOSFET array consisting of four N-channel MOSFETs with 2 drain sources, 2 sources, and 2 gates. This FET array is designed to provide a higher current rating or higher source-drain voltage rating than what is available with single N-channel FETs. The DMC6070LFDH-7 is an array of four FETs that form an independently operating transistor. Each FET array has a separate gate, drain and source connection. This unique construction allows the array to be configured to provide the performance characteristics of an individual MOSFET.
Application Field
The DMC6070LFDH-7 is ideal for use in switching applications, in particular where high current or higher voltage ratings are required. It is commonly used in power supply designs and power filtering circuits. For example, the devices can be used to switch high currents in power amplifiers, DC-DC converters, as well as for switching high power loads such as motor control circuits. It can also be used as a core component in wireless communication systems and motor control systems. The FET array can also be used in a wide range of digital and analog circuit designs, from consumer electronics to industrial control system.
Working Principle
The DMC6070LFDH-7 works according to an enhanced Commutated Field Effect Transistor (eCFET) principle. The device is designed to provide high current gain or higher source-drain voltage rating than what is available with single N-channel FETs. This is achieved by the use of a field-effect transistor with commutating gate, drain and source connections. The gate of each FET is commutated between two sources of voltage, allowing two or more channels to independently switch their own source-drain relationship. This allows the device to switch large amounts of current with low gate capacitance and gate resistance.
When the eCFET model is used, the drain of one FET is connected to the source of another FET, creating a channel with a lower on-state voltage and a more positive off-state voltage. Therefore, the device is able to switch a higher voltage and current than a single FET. In addition, the DMC6070LFDH-7 features a high current gain, making it ideal for high-current applications such as motor control, power supply designs, and power filtering.
The DMC6070LFDH-7 is a cost-effective solution for a wide range of digital and analog circuit designs. It provides excellent power handling, switching performance and thermal stability in an array package. It is a reliable and robust component with long lifetime and high power capability.
The specific data is subject to PDF, and the above content is for reference
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