Allicdata Part #: | DMN7022LFG-7DITR-ND |
Manufacturer Part#: |
DMN7022LFG-7 |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 75V 7.8A PWDI3333-8 |
More Detail: | N-Channel 75V 7.8A (Ta) 900mW (Ta) Surface Mount P... |
DataSheet: | DMN7022LFG-7 Datasheet/PDF |
Quantity: | 4000 |
2000 +: | $ 0.20170 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | PowerDI3333-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 900mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2737pF @ 35V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 56.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 7.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.8A (Ta) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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?DMN7022LFG-7 is a popular digital-enhanced MOSFET (D-MOSFET) device, which is used in the majority of power switching applications across the world. The DMN7022LFG-7 is a general-purpose power MOSFET, which provides a robust controllability to design engineers and system architects. It is a n-channel logic-level power floating gate device, designed to drive higher currents. The DMN7022LFG-7 is commonly used as a switch or amplifier in a variety of different systems, due to its high voltage, current capabilities and low power dissipation.
The DMN7022LFG-7 has a variety of applications, such as it is used for DC motors, solenoids, relays, lighting, and other home appliances. It is also used in switching power supplies, AC motor control, solar inverters, and power inverters. In addition to these, the DMN7022LFG-7 is also used in the applications requiring multiple power supplies, such as LED lighting, LED backlighting, and PFC converters.
In terms of construction, the DMN7022LFG-7 is a three-terminal device which is fabricated from a silicon substrate, and has an encapsulated surface which contains an isolated floating gate structure. This isolated floating gate is source-drain-controlled and can be used to drive larger currents than standard MOSFETs, with relatively low power dissipation. The channels within the device are built with thin layers of silicon, which are interlaced with metal spacers that insulate the gate from the channel. The metal spacers also permit the charge to be moved from the source to the drain.
The working principle of the DMN7022LFG-7 is based on the principle of MOSFET—metal-oxide-semiconductor field-effect transistor. The device uses an electric field to control the conduction between the voltage gate and the channel region. As the gate voltage is increased, the electric field transverses the gate oxide, allowing current flow between the drain and the source contact. This current is proportional to the gate voltage and is known as the drain-source current (I DS) of the device.
As the drain-source current increases, the heat dissipation of the device also increases accordingly. Hence, the design engineers must consider the thermal constraints for the DMN7022LFG-7 device, as well as the over-current safety measures, when designing the power electronics application.
To summarize, the DMN7022LFG-7 is a widely used MOSFET device offering high voltage and current ratings and low power dissipation, suitable for various power switching applications. The device uses an electric field to toggle the conduction between source and drain contacts and relies on thermal management for safe operation.
The specific data is subject to PDF, and the above content is for reference
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