DMN80H2D0SCTI

DMN80H2D0SCTI is a gate-source voltage mosfet with a maximum current rating of 80A, sourced from Diodes Incorporated. This device is characterized as a medium to high-performance bipolar N-channel MOSFET (logic level) for use in commercial and consumer electronics applications, such as data line protection, programmable logic controllers and other general purpose switching applications. It ensures low gate charge and low on-state resistance at high temperature.

Application Field and Working Principle

The DMN80H2D0SCTI can be used in different application fields such as switching, lighting control, power management in input/output circuits and home appliance controller systems. It is ideal for power switch and high frequency applications. It features low stand-by current and fast switching, capable of providing high-speed switching performance with low power dissipation.

MOSFETs are based on the principle of majority carriers including electrons for n-channel MOSFETs. The DMN80H2D0SCTI has an n-channel and works by taking a voltage signal from the gate and applying it to the p-type substrate. This will cause a current flow from the drain to the source. The resistance between the drain and the source can be controlled by controlling the voltage applied to the gate. The higher the voltage the lower the resistance. When designing circuits with this MOSFET, care must be taken to ensure that the gate voltage applied is always with the safety ratings of the device.

The DMN80H2D0SCTI features low gate charge and low on-state resistance at high temperature, which makes it a good choice for applications where high current is switched with minimal dissipation. As it is a logic level device, it only requires a small gate voltage to operate. It is also capable of withstanding high static drain-to-source voltages up to 80volts without any gate driving voltage.

In addition, this MOSFET provides very low source-drain capacitance, which improves the high-frequency performance, and make it an ideal choice for switching applications such as Class D audio amplifier or buck/boost converter. Furthermore, the device also provides Avalanche energy rated at 600mJ, making it suitable for harsh applications.

The DMN80H2D0SCTI is designed to offer a wide range of features and excellent performance in a very small space. It is available in a package with a maximum power dissipation of 314.65W, making it ideal for high performance applications. It is also RoHS compliant and offers a wide range of quality control measures.

In conclusion, the DMN80H2D0SCTI is a high-performance bipolar N-channel MOSFET (logic level) for use in many different applications. It is characterized by its low gate charge, low on-state resistance, low source-drain capacitance, and excellent high-frequency performance. It is RoHS compliant and offers a wide range of quality control measures as well as high surge rating. It is a great choice for applications where high current switching is required with minimal dissipation.