DMN90H8D5HCTI

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The DMN90H8D5HCTI is a single-die MOSFET transistor from STMicroelectronics. It uses a vertical DMOS (double-diffused MOSFET) structure and is a self-protected N-channel MOSFET that is designed to minimize the on-resistance while providing an improved power density. The DMN90H8D5HCTI is best suited for industrial applications due to its ruggedness and low power consumption. With its low total gate charge, it is well-suited for high-frequency switching applications.

The DMN90H8D5HCTI has a drain-source voltage rating of 60V, and its maximum gate-source voltage rating is ±30V. It is capable of high power operation with a maximum drain current rating of 8 amperes and a maximum total power dissipation of 75 watts. Its Avalanche current rating is up to 8A and the maximum on-state resistance is 0.8 Ohms. The DMN90H8D5HCTI has a maximum junction temperature rating of 150°C.

The DMN90H8D5HCTI is designed for applications such as power switching, motor drive, high frequency conversion, DC-DC converters and Audio Amplifiers. It is well suited for high frequency switching applications due to its low gate charge and high frequency performance. The DMN90H8D5HCTI is a versatile device that can be used in various applications that require low RDS(on) and good efficiency.

The working principle of the DMN90H8D5HCTI is based on a MOS field-effect transistor (MOSFET) semiconductor. The DMN90H8D5HCTI is composed of an n-type drain region, a p-type body, and p-type source regions, all of which are connected to metal contacts. The drain to source voltage creates an electric field in the channel between the source and the drain, which modulates the conductance of the channel. The width of the channel is controlled by the applied gate-source voltage, which modulates the number of carriers in the channel and thus the current passing through it. This current is the output current of the device.

The voltage applied to the gate is isolated from the channel by a thin insulating layer known as a gate oxide. When the gate voltage is increased, the channel is opened and a large current can pass through it. When the gate voltage is reduced, the channel is "pinched off" and the current is reduced. The DMN90H8D5HCTI is designed to provide low on-resistance with a low gate driving voltage and high frequency performance.

The DMN90H8D5HCTI is a versatile device that can be used for a range of applications. It is best suited for industrial applications due to its ruggedness and low power consumption. It can be used for switching applications such as power switching, motor control, high frequency conversion, DC-DC converters, and Audio Amplifiers. The device is well-suited for high-frequency switching applications due to its low total gate charge and its high frequency performance. It also provides a low on-resistance while allowing a low gate driving voltage. The DMN90H8D5HCTI provides a high level of power density, making it a suitable choice for applications where size and power are factors.

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