DMS2220LFDB-7 Allicdata Electronics
Allicdata Part #:

DMS2220LFDB-7DITR-ND

Manufacturer Part#:

DMS2220LFDB-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET P-CH 20V 3.5A 6-DFN
More Detail: P-Channel 20V 3.5A (Ta) 1.4W (Ta) Surface Mount U-...
DataSheet: DMS2220LFDB-7 datasheetDMS2220LFDB-7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.4W (Ta)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
Vgs (Max): ±12V
Series: --
Rds On (Max) @ Id, Vgs: 95 mOhm @ 2.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMS2220LFDB-7 is a single-instance FET (field effect transistor) that is micro-sized, low leakage and low power. It is ideal for a wide range of applications that involve switching, remote sensing and control. This particular FET has a voltage rating of 7V and is designed for low-power applications in commercial, industrial and consumer-level equipment.

The DMS2220LFDB-7 is based on a process known as the MOSFET (metal oxide semiconductor field effect transistor). This process is based on the pinch-off effect, where the current of a MOSFET decreases exponentially as the drain voltage increases. The MOSFET is an incredibly popular field effect transistor that is used in many different types of applications, such as digital signal processing, signal amplification, motor control, power systems and more.

The working principle of the DMS2220LFDB-7 is based on the fact that it acts as a gate, allowing or blocking electrical action between the source and the drain. When the gate is open, the transistor is called "on", meaning current is allowed to flow between the source and drain. When the gate is closed, the transistor is said to be "off", meaning no current is allowed to flow.

The DMS2220LFDB-7 is most commonly used as a controllable switch for remote sensing and control applications. This type of FET has a low power consumption, making it a good choice for applications that require power efficiency. It can also be used in low voltage and leakage-limiting applications. Furthermore, the DMS2220LFDB-7 has an ESD rating of 5, meaning it can withstand static discharges of up to 5 kV without being affected.

When it comes to power control, the DMS22020LFDB-7 is a great option. It can be used to switch on or off other electrical devices to reduce energy consumption. It is also ideal for motor applications, as it can control the speed and torque of the motor by controlling the drain current. In addition, it can be used to adjust digital or analog signals, such as sounds or images.

The DMS2220LFDB-7 is a very useful and versatile single-instance FET that can be used in a variety of applications. Its low power consumption and high ESD tolerance make it an ideal choice for low voltage and low leakage systems. Furthermore, its ability to act as a controllable switch makes it perfect for remote sensing and control applications. All these benefits combine to make the DMS2220LFDB-7 an excellent choice for power control of various mechanisms and circuits.

The specific data is subject to PDF, and the above content is for reference

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