DMT5015LFDF-7 Discrete Semiconductor Products |
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Allicdata Part #: | DMT5015LFDF-7DITR-ND |
Manufacturer Part#: |
DMT5015LFDF-7 |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 50V 9.1A 6DFN |
More Detail: | N-Channel 50V 9.1A (Ta) 820mW (Ta) Surface Mount 6... |
DataSheet: | DMT5015LFDF-7 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.14599 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | 6-UDFN2020 (2x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 820mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 902.7pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.1A (Ta) |
Drain to Source Voltage (Vdss): | 50V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMT5015LFDF-7 application field and working principle
DMT5015LFDF-7 is an n-channel enhancement mode MOSFET,a singlefield effect transistor (FET) produced by Infineon Technologies AG. It is one of the industry’s most popular discrete MOSFETs and is used in many applications including power, communications, automotive and industrial control.
The key features and benefits of the DMT5015LFDF-7 include excellent thermal performance and very low on-resistance, very low gate charge and excellent gate threshold voltage characteristics. The device also offers very low operating operating temperature range, high current drain capability and very low gate-source capacitance.
The DMT5015LFDF-7 has an operating junction temperature range of -55 to +150 degrees Celsius and can operate in the maximum allowable ambient temperature range of -55 to +105 degrees Celsius.
The device is a MOSFET and its working principle is very simple. It has three terminal electrodes named gate, source, and drain. The gate is used as the controlling terminal which is used to control the flow of current through the other two terminals, the source and the drain. When voltage is applied to the gate, an electric field is created that control the flow of current through the device in a downward direction, from source to drain. When the voltage is removed, the electric field disappears and the current stops flowing.
The DMT5015LFDF-7 has a wide range of applications and is used in many areas where reliability and lack of leakage are important. Such areas include automotive systems, industrial control, power electronics, radio frequency systems, and many other applications.
The device is also used in high switching power converters, power supplies, and other high-power applications. It is often used in place of silicon controlled rectifiers due to its higher efficiency, better reliability, and faster switching speed.
The DMT5015LFDF-7 is also used in many signal processing applications for its excellent switching characteristics. It can be used for signal amplification, digital-to-analog conversion, and signal filtering. It is often used in amplifier, power switching, and other signal processing applications.
The DMT5015LFDF-7 is an excellent choice for many applications, due to its high performance, small size, and excellent thermal and electrical characteristics. Its wide range of applications, reliability, and long life makes it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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