DN1509N8-G Discrete Semiconductor Products |
|
Allicdata Part #: | DN1509N8-GTR-ND |
Manufacturer Part#: |
DN1509N8-G |
Price: | $ 0.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET N-CH 90V 360MA SOT89-3 |
More Detail: | N-Channel 90V 360mA (Tj) 1.6W (Ta) Surface Mount T... |
DataSheet: | DN1509N8-G Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.34522 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 90V |
Current - Continuous Drain (Id) @ 25°C: | 360mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 0V |
Rds On (Max) @ Id, Vgs: | 6 Ohm @ 200mA, 0V |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 25V |
FET Feature: | Depletion Mode |
Power Dissipation (Max): | 1.6W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-243AA (SOT-89) |
Package / Case: | TO-243AA |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DN1509N8-G is a single N-channel enhancement mode MOSFET with wide applications in various electronic devices.
It is a high-performance, power MOSFET circuit, and it is designed to simplify the process of developing and troubleshooting. The amount of current that it can support depends on the operating voltage and on its size. It is capable of a maximum DC current of 75A and a maximum of 10A for the pulsed case.
The device works with a voltage of 10V, a gate-source voltage of 10V and a drain-source voltage of 100V. Its total gate charge is 33nC and its threshold voltage is 2.15V. It is a three-terminal device and it is made of silicon.
The DN1509N8-G device works based on the field-effect transistor (FET). This is a semiconductor device that can be used to amplify or switch electrical signals. It is different from a bipolar transistor because it only uses one type of semiconductor material instead of two.
Essentially, the device works by controlling the flow of electrical current. It has a gate terminal that allows the flow of current to be controlled by a voltage. When the voltage is high, the flow of current is allowed, and when the voltage is low, the flow of current is blocked. This type of device is used for power management in many electrical systems, such as in computers, automobiles and communication systems.
The DN1509N8-G is well-suited for a range of applications, including power supplies, servers, and consumer electronics. It is also suitable for use in linear and switching circuits, making it a very versatile device. It is also easy to install, as it has been designed for minimal size and maximum reliability.
In summary, the DN1509N8-G is a single N-channel enhancement mode MOSFET with wide applications in various electronic devices. It is a high-performance, power MOSFET circuit that works based on the field-effect transistor and is capable of a maximum DC current of 75A and a maximum of 10A for the pulsed case. It is a three-terminal device that is well-suited for a range of applications, including power supplies, servers, and consumer electronics. It is also easy to install, as it has been designed for minimal size and maximum reliability.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
DN1509N8-G | Microchip Te... | 0.39 $ | 1000 | MOSFET N-CH 90V 360MA SOT... |
DN1509K1-G | Microchip Te... | 0.32 $ | 1000 | MOSFET N-CH 90V 0.2A SOT2... |
E3FA-DN15 2M | Omron Automa... | 50.65 $ | 1000 | INFRARED M18 PLSTC 300MM ... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...