DN1509N8-G Allicdata Electronics

DN1509N8-G Discrete Semiconductor Products

Allicdata Part #:

DN1509N8-GTR-ND

Manufacturer Part#:

DN1509N8-G

Price: $ 0.39
Product Category:

Discrete Semiconductor Products

Manufacturer: Microchip Technology
Short Description: MOSFET N-CH 90V 360MA SOT89-3
More Detail: N-Channel 90V 360mA (Tj) 1.6W (Ta) Surface Mount T...
DataSheet: DN1509N8-G datasheetDN1509N8-G Datasheet/PDF
Quantity: 1000
2000 +: $ 0.34522
Stock 1000Can Ship Immediately
$ 0.39
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 90V
Current - Continuous Drain (Id) @ 25°C: 360mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Rds On (Max) @ Id, Vgs: 6 Ohm @ 200mA, 0V
Vgs(th) (Max) @ Id: --
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.6W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-243AA (SOT-89)
Package / Case: TO-243AA
Description

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The DN1509N8-G is a single N-channel enhancement mode MOSFET with wide applications in various electronic devices.

It is a high-performance, power MOSFET circuit, and it is designed to simplify the process of developing and troubleshooting. The amount of current that it can support depends on the operating voltage and on its size. It is capable of a maximum DC current of 75A and a maximum of 10A for the pulsed case.

The device works with a voltage of 10V, a gate-source voltage of 10V and a drain-source voltage of 100V. Its total gate charge is 33nC and its threshold voltage is 2.15V. It is a three-terminal device and it is made of silicon.

The DN1509N8-G device works based on the field-effect transistor (FET). This is a semiconductor device that can be used to amplify or switch electrical signals. It is different from a bipolar transistor because it only uses one type of semiconductor material instead of two.

Essentially, the device works by controlling the flow of electrical current. It has a gate terminal that allows the flow of current to be controlled by a voltage. When the voltage is high, the flow of current is allowed, and when the voltage is low, the flow of current is blocked. This type of device is used for power management in many electrical systems, such as in computers, automobiles and communication systems.

The DN1509N8-G is well-suited for a range of applications, including power supplies, servers, and consumer electronics. It is also suitable for use in linear and switching circuits, making it a very versatile device. It is also easy to install, as it has been designed for minimal size and maximum reliability.

In summary, the DN1509N8-G is a single N-channel enhancement mode MOSFET with wide applications in various electronic devices. It is a high-performance, power MOSFET circuit that works based on the field-effect transistor and is capable of a maximum DC current of 75A and a maximum of 10A for the pulsed case. It is a three-terminal device that is well-suited for a range of applications, including power supplies, servers, and consumer electronics. It is also easy to install, as it has been designed for minimal size and maximum reliability.

The specific data is subject to PDF, and the above content is for reference

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