DN3765K4-G Allicdata Electronics

DN3765K4-G Discrete Semiconductor Products

Allicdata Part #:

DN3765K4-GTR-ND

Manufacturer Part#:

DN3765K4-G

Price: $ 1.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Microchip Technology
Short Description: MOSFET N-CH 650V 300MA 3DPAK
More Detail: N-Channel 650V 300mA (Tj) 2.5W (Ta) Surface Mount ...
DataSheet: DN3765K4-G datasheetDN3765K4-G Datasheet/PDF
Quantity: 1000
2000 +: $ 1.21733
Stock 1000Can Ship Immediately
$ 1.34
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 0V
Vgs(th) (Max) @ Id: --
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 25V
FET Feature: Depletion Mode
Power Dissipation (Max): 2.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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The DN3765K4-G is a high-performance, monolithic silicon N-Channel junction field-effect transistor that operates at 30V and 1A. It is an ideal device for a wide range of consumer, automotive and industrial applications.

This type of device offers a number of advantages compared to traditional bipolar junction transistors. Its gate insulator is much thinner than in BJTs, allowing it to be controlled with less power. Its input capacitance is much lower than that of a BJT, making it faster and more responsive. By using less power, it is also more reliable, making it the perfect choice for high-power applications.

The main application fields of the DN3765K4-G are medium-current switching, latching and driver circuits. This particular device can be used to control high-current loads, such as motors, solenoids and relays. It can also be used as a voltage source and to switch circuits faster than is possible with BJTs. Additionally, its high-speed switching ability makes it a good choice for data communications and security circuits.

The DN3765K4-G is fabricated using a two-stage construction, with two gates on a single die. This type of construction allows for a high-speed switching operation and a low “on” resistance, making it ideal for higher power applications. The two-stage construction also allows for the device to be self-limiting, as the self-biased gate operates at a lower voltage than the drain-to-source voltage. This reduces the total power dissipated and the thermal stress on the device.

In terms of its operation, the DN3765K4-G works similarly to a conventional bipolar junction transistor (BJT). When the gate voltage is greater than the threshold voltage (Vth), the device is turned ‘on’. This causes a current to flow from source to drain, as the resistance between source and drain is reduced. When the gate voltage is returned to below the threshold voltage, the device is turned ‘off’, and the current flow ceases. The device can also be operated in ‘reverse-mode’, which reverses the flow of current by applying a negative voltage to the gate.

The DN3765K4-G is an extremely versatile device and is ideal for applications such as switching, latching, inverting, data communications and security systems. Its reliability and small geometrical size also make it an attractive choice for a range of high-power applications including motor controls, drives and other fields requiring high-speed switching.

The specific data is subject to PDF, and the above content is for reference

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