DRA3123J0L

Resistor - Emitter Base (R2):	47 kOhms
Base Part Number:	DRA3123
Supplier Device Package:	SSSMini3-F2-B
Package / Case:	SOT-723
Mounting Type:	Surface Mount
Power - Max:	100mW
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Series:	--
Resistor - Base (R1):	2.2 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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The DRA3123J0L application field and working principle is related to a single bipolar junction transistor (BJT). The BJT type of transistor is primarily used in low power applications such as amplifying audio signals and controlling current flow in low voltage circuits. The DRA3123J0L is a pre-biased BJT, which has its base-emitter junction already forward biased by the manufacturer to reduce the start-up time needed.The pre-biased BJT is formed by two diodes joined at their P-N junctions so that the N-doped material from one diode is next to the P-doped material from the other, forming a junction. This junction is the base-emitter junction of the BJT. The structure of the transistor typically has three leads, the Base (B), Emitter (E) and Collector (C). The emitter is normally the lowest doped layer of the BJT, while the base and collector are layers with increasing doping.The working of a pre-biased BJT can be explained using the "charge control model." When the base-emitter junction is forward biased, i.e. when current flows from the base to the emitter, electrons are injected into the base region, decreasing the potential barrier between the emitter and the collector, allowing electrons to flow through. This current is known as the collector current. When the base-emitter junction is reversed biased, the collector current is reduced.The pre-biased BJT enhances the start-up performance of the device. This is due to the fact that a voltage difference is already established across the base-emitter junction. This reduces the start-up time that is required for electrons to be injected into the base region by providing a more conductive path for them.The DRA3123J0L has a wide range of applications including audio preamplification, low voltage control, power amplifiers and power converters. The device is suitable for usage in the automotive and consumer electronics markets, with its low power applications.In conclusion, the DRA3123J0L is a pre-biased BJT manufactured for low power use. Its structure is composed of three terminals, a base, emitter, and collector. The function of the device is explained by the charge control model. It is possible to use the device in various types of applications that require low power, such as audio pre-amplification and low voltage control.

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