DRA3115G0L

Resistor - Emitter Base (R2):	100 kOhms
Base Part Number:	DRA3115
Supplier Device Package:	SSSMini3-F2-B
Package / Case:	SOT-723
Mounting Type:	Surface Mount
Power - Max:	100mW
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Series:	--
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Introduction

DRA3115G0L is a type of pre-biased NPN transistor from Toshiba Corporation. It is used in a variety of applications where a compact, robust, and reliable power supply is needed. The DRA3115G0L can be used for both low-power and high-power applications, due to its ability to operate at high input/output (I/O) levels with minimal power dissipation.

Applications

The DRA3115G0L can be used in a wide range of applications, including power amplifiers, power supplies, and motor controllers. It can be used in high-frequency signal amplifiers, precision timing circuits, and audio signal amplifiers. Additionally, it can be used in motor control, motion control, and active signal processing.The DRA3115G0L is particularly well suited for applications that require high I/O levels and a wide range of operating voltages. This is due to its high input/output voltage ratio and minimum power dissipation. Furthermore, it features a relatively low input current, allowing for higher efficiency and greater power savings.

Working Principle

The DRA3115G0L is a type of NPN transistor, which is pre-biased with a gate voltage. This gate voltage is a crucial factor in determining the operation of the transistor. When the gate voltage is increased, the base-emitter current increases, which further increases the collector-emitter voltage. When the gate voltage drops, the base-emitter current drops, resulting in a decrease in the collector-emitter voltage.The DRA3115G0L is a reasonably fast switching transistor, meaning that it can switch between two states very quickly. This is achieved by controlling the base-emitter current very precisely. The base-emitter current is in turn controlled by the gate voltage, which can be simply adjusted according to the desired switching speed.

Conclusion

The DRA3115G0L is a pre-biased NPN transistor that is well suited for applications requiring high I/O levels and a wide range of operating voltages. It features a relatively low input current and fast switching capabilities, making it suitable for a variety of uses. Its working principle relies on controlling the base-emitter current with a gate voltage, which can be adjusted to achieve fast switching speeds.

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