DRA3114Y0L

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The DRA3114Y0L is a single, pre-biased, bipolar junction transistor (BJT). It is used primarily for applications such as small-signal amplifiers and switching circuits. It is an NPN-type transistor and features a collector-emitter reverse breakdown voltage of 25V and a minimum current gain of 20 dB. The DRA3114Y0L has a package size of 3.4mm x 3.4mm and is offered in a SMD-2Q-25 package.

The DRA3114Y0L is a bipolar junction transistor with a normal gain-bandwidth product of 30 Mhz at collector currents of 10mA or higher. It has a collector-emitter saturation voltage of 800mV and a hFE of 40-200. The emitter is designed to be pre-biased to facilitate a greater current gain at low collector currents. It also has an electrical noise figure of less than 0.8dB and a power-on-reset feature that is designed to reduce electrical noise in the system.

The DRA3114Y0L works on the principle of minority carrier injection, which is a phenomenon in which charge carriers, with opposite polarity to the applied voltage, are injected into the base region of the transistor from the emitter. This injection of charge carriers enables the current gain in the transistor to occur by allowing more electrons to flow from the collector to the emitter. The current gain of the transistor is determined by the ratio of these minority carriers injected into the base region of the transistor to the amount of carriers that are collected in the collector region. The current gain of the DRA3114Y0L at 10 mA of collector current is typically 20dB.

The DRA3114Y0L is a versatile transistor and is suitable for a wide variety of applications including digital signal processing (DSP), RF power amplifiers, voltage regulators, and audio amplifiers. It can also be used in high-speed power switching circuits as it has a fast switching speed of 1.2nsec. It is also well-suited to low-noise, high-speed switching applications due to its low noise figure. Furthermore, it is pre-biased, making it easier to use in applications where the base current is insufficient to make the transistor active.

The DRA3114Y0L is a versatile transistor and is suitable for a wide variety of applications including digital signal processing (DSP), RF power amplifiers, voltage regulators, and audio amplifiers. It can also be used in high-speed power switching circuits as it has a fast switching speed of 1.2nsec. It is also well-suited to low-noise, high-speed switching applications due to its low noise figure. Additionally, the DRA3114Y0L is designed to be pre-biased, which makes it easier to use in applications where the base current is insufficient to make the transistor active.

In summary, the DRA3114Y0L is an NPN-type transistor with a collector-emitter reverse breakdown voltage of 25V and a minimum current gain of 20 dB. It has a small package size of 3.4mm x 3.4mm and is offered in a SMD-2Q-25 package. It is suitable for applications such as small-signal amplifiers and switching circuits, digital signal processing (DSP), RF power amplifiers, voltage regulators, and audio amplifiers. Its features include a fast switching speed of 1.2nsec, a collector-emitter saturation voltage of 800mV, a power-on-reset feature designed to reduce electrical noise, and a low noise figure of less than 0.8dB. The DRA3114Y0L is pre-biased, enabling it to operate with a greater current gain at low collector currents, making it ideal for use in low-noise, high-speed switching applications.

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