Allicdata Part #: | DRA3115E0LTR-ND |
Manufacturer Part#: |
DRA3115E0L |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 100MW SSSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DRA3115E0L Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
10000 +: | $ 0.04747 |
30000 +: | $ 0.04441 |
50000 +: | $ 0.04084 |
Resistor - Emitter Base (R2): | 100 kOhms |
Base Part Number: | DRA3115 |
Supplier Device Package: | SSSMini3-F2-B |
Package / Case: | SOT-723 |
Mounting Type: | Surface Mount |
Power - Max: | 100mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 100 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DRA3115E0L is commonly used as a single, pre-biased bipolar junction transistor (BJT). It is classified as type NPN/NPN, with a maximum collector current of 1.5 A. As such, it is commonly used as an output transistor in power circuits, ranging from low-voltage control devices to industrial strength power converters. This type of transistor is also commonly found in consumer electronics devices, such as television sets, to provide switching functions.
DRA3115E0L is a depletion-mode transistor, meaning that it relies on the presence of a reverse bias between the base and the collector in order to be able to conduct current. This reverse bias causes depletion of minority (non-majority) carriers from the base-collector junction, which in turn causes the junction to become non-conductive. Depletion-mode transistors are thus ideal for use in applications requiring low-current operation and high speed switching.
The DRA3115E0L also has an efficient middle frequency response as well as a wide range of other characteristics that make it suitable for many different applications, such as RF amplifiers, tuned circuits, class-C amplifiers, and power management circuits. The wide range of features make the DRA3115E0L the perfect choice for a variety of applications, including portable electronic devices, audio amplifiers, power converters, and many more.
The typical working characteristics of the DRA3115E0L include a maximum collector current of 1.5 A, a maximum emitter-collector voltage of 12 V, and a maximum collector-emitter voltage of 30 V. It has a minimum hFE of 70 and a maximum hFE of 250, which allows for efficient biasing of the transistor. Additionally, the DRA3115E0L can handle frequencies up to 1 MHz and is capable of continuous operation up to 25°C.
As a single, pre-biased bipolar junction transistor, the DRA3115E0L can be used in a wide range of applications, from low-voltage control devices to industrial-strength power converters. It offers many advantages, such as efficient middle frequency response, wide frequency range, and excellent switching speed. This makes the DRA3115E0L a great choice for many applications, providing efficient, reliable operation and excellent switching performance.
The specific data is subject to PDF, and the above content is for reference
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