DRA3115E0L Allicdata Electronics
Allicdata Part #:

DRA3115E0LTR-ND

Manufacturer Part#:

DRA3115E0L

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 100MW SSSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DRA3115E0L datasheetDRA3115E0L Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
10000 +: $ 0.04747
30000 +: $ 0.04441
50000 +: $ 0.04084
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Resistor - Emitter Base (R2): 100 kOhms
Base Part Number: DRA3115
Supplier Device Package: SSSMini3-F2-B
Package / Case: SOT-723
Mounting Type: Surface Mount
Power - Max: 100mW
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Series: --
Resistor - Base (R1): 100 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DRA3115E0L is commonly used as a single, pre-biased bipolar junction transistor (BJT). It is classified as type NPN/NPN, with a maximum collector current of 1.5 A. As such, it is commonly used as an output transistor in power circuits, ranging from low-voltage control devices to industrial strength power converters. This type of transistor is also commonly found in consumer electronics devices, such as television sets, to provide switching functions.

DRA3115E0L is a depletion-mode transistor, meaning that it relies on the presence of a reverse bias between the base and the collector in order to be able to conduct current. This reverse bias causes depletion of minority (non-majority) carriers from the base-collector junction, which in turn causes the junction to become non-conductive. Depletion-mode transistors are thus ideal for use in applications requiring low-current operation and high speed switching.

The DRA3115E0L also has an efficient middle frequency response as well as a wide range of other characteristics that make it suitable for many different applications, such as RF amplifiers, tuned circuits, class-C amplifiers, and power management circuits. The wide range of features make the DRA3115E0L the perfect choice for a variety of applications, including portable electronic devices, audio amplifiers, power converters, and many more.

The typical working characteristics of the DRA3115E0L include a maximum collector current of 1.5 A, a maximum emitter-collector voltage of 12 V, and a maximum collector-emitter voltage of 30 V. It has a minimum hFE of 70 and a maximum hFE of 250, which allows for efficient biasing of the transistor. Additionally, the DRA3115E0L can handle frequencies up to 1 MHz and is capable of continuous operation up to 25°C.

As a single, pre-biased bipolar junction transistor, the DRA3115E0L can be used in a wide range of applications, from low-voltage control devices to industrial-strength power converters. It offers many advantages, such as efficient middle frequency response, wide frequency range, and excellent switching speed. This makes the DRA3115E0L a great choice for many applications, providing efficient, reliable operation and excellent switching performance.

The specific data is subject to PDF, and the above content is for reference

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