DRA3143Z0L

Resistor - Emitter Base (R2):	47 kOhms
Base Part Number:	DRA3143
Supplier Device Package:	SSSMini3-F2-B
Package / Case:	SOT-723
Mounting Type:	Surface Mount
Power - Max:	100mW
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Series:	--
Resistor - Base (R1):	4.7 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Introduction

DRA3143Z0L is a single, pre-biased, NPN/PNP transistor and it is used for the switching of high speed active devices. It is primarily designed and manufactured by Hyduken. This transistor is a part of Hyduken\'s family of microprocessor and voltage controlled oscillator products. It can be used for signal and low power signal switching applications.

Application Field

The major application field of the DRA3143Z0L transistor is in high-speed switching active devices such as microprocessors and voltage controlled oscillators (VCOs). This type of transistor has a high DC current gain and low switch-on voltage. It is used in signal and low power signal switching applications and has the ability to switch large currents while maintaining very low on-state current levels.The DRA3143Z0L transistor can also be used for switching applications involving optical devices such as laser diodes and photodiodes. It is commonly used for high speed attention circuitry and for optical data communication. The DRA3143Z0L can also be used for audio amplifiers and other related applications.

Working Principle

The basic working principle of the DRA3143Z0L transistor involves two transistors, NPN and PNP, arranged in a cascaded configuration. When a small current is applied across the Base-Emitter junction of the NPN transistor, it creates a negative voltage from the collector-base junction of the PNP transistor. This negative voltage is then applied to the base of the PNP transistor, which then draws current from the collector-base junction of the NPN transistor. This creates a positive voltage, which results in the current gain of the transistor.The gain of the DRA3143Z0L transistor is higher than any other type of transistor. The gain is significantly higher than that of a PNP transistor. The gain of the DRA3143Z0L transistor is so high that any small change in the base current of the NPN transistor results in a large change in the collector current. This allows the transistor to switch high currents while maintaining very low on-state current levels.

Conclusion

The DRA3143Z0L transistor is a pre-biased NPN/PNP single transistor. It is used for high speed switching for active devices such as microprocessors and voltage controlled oscillators. The DRA3143Z0L transistor is also used in optical switching applications such as laser diodes and photodiodes. The working principle of the DRA3143Z0L transistor involves a cascaded configuration of two transistors. The gain of the transistor is higher than any other type of transistor and this makes it ideal for applications that require high currents to be switched with very low on-state current levels.

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