DRA3124X0L

Resistor - Emitter Base (R2):	47 kOhms
Base Part Number:	DRA3124
Supplier Device Package:	SSSMini3-F2-B
Package / Case:	SOT-723
Mounting Type:	Surface Mount
Power - Max:	100mW
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Series:	--
Resistor - Base (R1):	22 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Introduction

DRA3124X0L is a Pre-Biased, Single Bipolar Transistors (BJT) that is used in a variety of applications, including switching, amplifying, current switching, and low frequency modulation applications. It is available in both silicon and germanium technologies, and is suitable for use in both low and high frequency applications. Its main advantages are its compatibility with a wide range of related components, its low collector-emitter leakage, and its ability to handle large signals with a minimum of distortion.

Application Field

DRA3124X0L is a versatile transistor that can be used in a variety of applications. It is ideal for use as a driver stage amplifier and as a switching element. In low frequency modulation applications, such as FM or AM modulation, the device\'s high frequency response makes it an ideal choice. It is also well suited to applications that require fast switching times, such as power output stages, power amplifiers, switching mode power supplies, and static converters.The DRA3124X0L can also be used in voltage-regulating circuits, such as voltage regulators and voltage references. Since the device is pre-biased, it can be used in circuits where the device bias is not manually adjustable, making it an ideal solution for applications that require consistent performance over a wide range of operating conditions.

Working Principle

The DRA3124X0L operates on the same principle as other transistors, as it uses a base-emitter junction to control the flow of current. When a positive voltage is applied to the base of the device, electrons from the emitter are attracted to the base and begin to flow across the base-collector junction. The resulting current flow can then be regulated by controlling the base voltage.When using the DRA3124X0L in a switching application, the device\'s high frequency response can make it particularly useful. As the base voltage is switched, the current flow across the junction is also switched quickly, allowing for fast switching times and reduced distortion.The device also has a low collector-emitter leakage current, making it ideal for applications where power losses need to be kept to a minimum. This leakage current also prevents stray currents that may adversely affect other components in the circuit.

Conclusion

The DRA3124X0L is an ideal solution for a number of applications. Its compatibility with a wide range of related components and its low collector-emitter leakage make it an ideal choice for both low and high frequency applications. Its high frequency response also makes it a great choice for switching applications, while its pre-biased design makes it suitable for use in circuits where the bias cannot be manually adjusted.

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