Allicdata Part #: | DRA3124E0LTR-ND |
Manufacturer Part#: |
DRA3124E0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 100MW SSSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DRA3124E0L Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Resistor - Emitter Base (R2): | 22 kOhms |
Base Part Number: | DRA3124 |
Supplier Device Package: | SSSMini3-F2-B |
Package / Case: | SOT-723 |
Mounting Type: | Surface Mount |
Power - Max: | 100mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DRA3124E0L is a single, pre-biased, bipolar transistor (BJT) that is specifically designed for broadband and general purpose applications. It features high current drive and low-noise operation, making it ideal for amplifying applications that require low distortion and low signal-to-noise ratio. Its wide cutoff frequency range also ensures reliable signal transmission.
The DRA3124E0L is a NPN silicon device with a 30V collector-base voltage rating, making it suitable for use in a wide range of commercial and industrial applications. It has a maximum collector current rating of 2A, allowing it to easily drive large current loads. The transistor also has a 60 V collector-emitter voltage rating and a 0.5 W power dissipation rating. It is designed to operate between -40°C and +130°C, making it suitable for many extreme temperature applications. In addition, the device has an gain A***ually range of 2.0 to 2.75, making it useful in amplifying signals from low-noise sources.
The DRA3124E0L works by amplifying a small input current signal and producing a large output current signal. It is commonly used in amplifier circuits, where it is used to drive a load, such as a loudspeaker. The transistor works by having a base electrode to which a small input current is applied. This then causes a larger proportional current to flow from the collector to the emitter. The gain of the transistor is determined by the ratio of the collector current to the base current. The larger this ratio, the greater the gain, and the higher the signal-to-noise ratio of the output signal. The gain can be adjusted by varying the base current.
In addition to amplifying signals, the DRA3124E0L can be used in a variety of switching applications. The transistor can be used to turn a load on and off, or to control a larger current load with a smaller input signal. For example, the transistor can be used to switch a light on and off, or to control the speed of a motor. This technique is commonly used in remote controls, where the load is a switch that controls the device.
The DRA3124E0L is an inexpensive and reliable device that can be used in a variety of commercial and industrial applications. Its high current drive and low-noise operation makes it ideal for amplifying signals from low-noise sources. It can also be used in switching applications, where it can be used to control the on/off state of a load or to adjust the speed of a motor. The wide temperature rating and the adjustable gain range of the transistor make it suitable for use in many extreme temperature applications.
The specific data is subject to PDF, and the above content is for reference
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