Allicdata Part #: | DRA3144E0LTR-ND |
Manufacturer Part#: |
DRA3144E0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 100MW SSSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DRA3144E0L Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Resistor - Emitter Base (R2): | 47 kOhms |
Base Part Number: | DRA3144 |
Supplier Device Package: | SSSMini3-F2-B |
Package / Case: | SOT-723 |
Mounting Type: | Surface Mount |
Power - Max: | 100mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DRA3144E0L is a single pre-biased bipolar junction transistor (BJT). It is a type of transistor that uses a single base-emitter biasing and is commonly used in a variety of applications. The DRA3144E0L is a highly reliable device, capable of withstanding high temperatures, making it an ideal choice for use in a wide range of applications.
The DRA3144E0L is a NPN-type transistor, meaning that it is comprised of three sections; the base, the emitter, and the collector. These sections are separated by a junction, making it a bipolar transistor. This junction is where the biasing occurs, and it requires a voltage to be applied in order to turn the transistor on. The pre-bias of the DRA3144E0L is such that it requires only a minimal voltage to switch the device. This makes it ideal for low-voltage circuits.
The DRA3144E0L works by enabling or disabling current flow through its three sections. When the base-emitter junction is biased, current flow is enabled from the emitter to the collector, and the transistor is said to be in the “on” state. When the transistor is biased with a negative voltage, the transistor is said to be in the “off” state. The advantage of using a DRA3144E0L over other transistors is that it has a lower switching voltage, making it more suited for low voltage circuits.
The DRA3144E0L application field is broad and can be used in a variety of different applications. It can be found in high speed receivers, power drivers, and pulse-width modulation systems. It can also be used in logic circuits, as a high-voltage switch, or as an amplifier. Other uses include radio frequency applications, rotary speed controllers, wear and tear testers, and high current applications.
In conclusion, the DRA3144E0L single pre-biased bipolar junction transistor is a reliable and reliable device that is suitable for a wide range of applications. Its low switching voltage and wide application range make it an ideal choice for low voltage circuits and a variety of other applications. It is a highly reliable device capable of withstanding high temperatures, making it an ideal choice for use in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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