DRV5013ADQDBZT Allicdata Electronics
Allicdata Part #:

296-38449-2-ND

Manufacturer Part#:

DRV5013ADQDBZT

Price: $ 0.00
Product Category:

Sensors, Transducers

Manufacturer: Texas Instruments
Short Description: MAGNETIC SWITCH LATCH SOT23-3
More Detail: Digital Switch Latch Open Drain Hall Effect SOT-23...
DataSheet: DRV5013ADQDBZT datasheetDRV5013ADQDBZT Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Function: Latch
Technology: Hall Effect
Polarization: South Pole
Sensing Range: 5mT Trip, -5mT Release
Test Condition: -40°C ~ 125°C
Voltage - Supply: 2.7 V ~ 38 V
Current - Supply (Max): 2.7mA (Typ)
Current - Output (Max): 30mA
Output Type: Open Drain
Features: Temperature Compensated
Operating Temperature: -40°C ~ 125°C (TA)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Description

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Magnetic sensors - switches (solid state) vary greatly in their use, but are generally used to detect either the presence of a magnetic field or changes in the magnetic field.The DRV5013ADQDBZT is no exception.This guide will give an overview of the application field and working principle of the DRV5013ADQDBZT and why it is an attractive option for many applications.

The DRV5013ADQDBZT from Texas Instruments is an advanced, high performance, Hall-Effect Magnetic Sensor.Hall Effect sensors are used in a variety of applications, including automotive, consumer electronics, industrial automation, and medical.The DRV5013ADQDBZT is an especially attractive option due to its low power characteristics, as well as its wide operating range and excellent dynamic response characteristics.

One of the most important features of the DRV5013ADQDBZT is its ability to detect the presence of a magnetic field, and to output a digital signal which can be used to measure the magnitude and direction of a magnetic field.The device has an on resistance of 5 mOhm, a wide supply voltage range of 2.4V – 5.5V, and is supplied in a 5-pin SOT-23 package.The operating temperature range for this device is -40°C to 125°C, and the switching point accuracy is <= +- 2%.

The DRV5013ADQDBZT is designed to be used in applications where a reliable and accurate triggering of a digital output is desired.This makes the device ideal for applications such as sensing the presence or absence of a magnetic field in relays, motors, switches, and sensors.The DRV5013ADQDBZT has a wide supply voltage range and excellent dynamic response characteristics, making it an especially attractive solution for applications involving rapidly changing magnetic fields.

The DRV5013ADQDBZT works by using an on-chip Hall-Effect sensor to detect the presence or absence of a magnetic field.When the device is exposed to a magnetic field, the on-chip sensor will output a digital signal that can be used to measure the magnitude of the magnetic field.The device is designed to be used with digital electronics, so the output signal can easily be processed and analyzed.The digital output of the device is also capable of providing low power, reliable triggering of an external circuit.

The DRV5013ADQDBZT is an attractive option for many applications.Its low power characteristics, wide supply voltage range, and excellent dynamic response characteristics make it ideal for applications such as relays, motors, switches, and sensors which must perform reliably in rapidly changing magnetic environments.The device is also suitable for use in applications where accurate triggering of a digital output is desired.

In summary, the DRV5013ADQDBZT from Texas Instruments is a powerful, high performance Hall-Effect Magnetic Sensor.It is designed for use in applications where a reliable and accurate triggering of a digital output is desired, making it suitable for a variety of applications including relays, motors, switches, and sensors.The device is also capable of providing low power operation and excellent dynamic response characteristics, making it an excellent choice for applications involving rapidly changing magnetic fields.

The specific data is subject to PDF, and the above content is for reference

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