![DS1330YL-100 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | DS1330YL-100-ND |
Manufacturer Part#: |
DS1330YL-100 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Maxim Integrated |
Short Description: | IC NVSRAM 256K PARALLEL 34LPM |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 256Kb (32K x 8) |
Write Cycle Time - Word, Page: | 100ns |
Access Time: | 100ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 34-LPM |
Supplier Device Package: | 34-LPM |
Base Part Number: | DS1330Y |
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The DS1330YL-100 is a high reliability nonvolatile CMOS static RAM (nvSRAM) used in a range of industrial and military applications. It\'s designed to be a seamless replacement for various types of battery-backed SRAMs. As a nonvolatile RAM, the DS1330YL-100 can save and restore data in the event of an unexpected power loss, providing an important backup to protect against data corruption and system crashes.
The DS1330YL-100 provides 2K to 8K of battery-backed static RAM, protected by an array of optional EEPROMs with a wide selection of memory sizes and organization. The optional EEPROMs provide 256 bytes to 1K of protected data that can be read but not written. The protected data is protected against contact, vibration, and shock.
The DS1330YL-100 can be applied in various areas, such as military and industrial applications, where robust operation and high reliability are crucial. For instance, when used in military applications the DS1330YL-100 can preserve the state of the system even in extreme conditions. It is also used in industrial applications where long periods of stable operation are required. The DS1330YL-100 provides robust operation and is available in a variety of configurations to fit specific design needs.
The DS1330YL-100 works on the principle of static RAM. This type of memory stores data by holding a charge in each memory cell. This allows for fast data retrieval since no refresh operation is needed. Data is read from the memory by charging or discharging each bit line pair, and writing data to the memory is accomplished by either charging or dis charging specific bit line pairs.
The DS1330YL-100 can also be configured to provide battery-backed SRAM with level shifting and data protection. In this configuration, data protection is provided when power goes out by storing the data onto an optional EEPROM. When power is restored, the data is restored to the static RAM. Additionally, when the DS1330YL-100 is configured with an EEPROM, the data in the SRAM can be monitored on a real-time basis, providing additional data protection.
The DS1330YL-100 is a reliable and proven nonvolatile CMOS static RAM (nvSRAM) solution for use in a range of industrial and military applications. With its highly robust design, data protection, and wide range of memory configurations, the DS1330YL-100 is ideal for applications that require long-term, reliable operation and data protection in extreme conditions.
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